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Resistive random-access memory (ReRAM) is an emerging non-volatile memory technology for high-density and high-speed data storage. However, the sneak path interference (SPI) occurred in the ReRAM crossbar array seriously affects its data…
Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile memory technology due to its simple read/write operations and high storage density. However, its crossbar array structure causes a severe…
Despite the great promises that the resistive random access memory (ReRAM) has shown as the next generation of non-volatile memory technology, its crossbar array structure leads to a severe sneak path interference to the signal read back…
A novel framework for performance analysis and code design is proposed to address the sneak path (SP) problem in resistive random-access memory (ReRAM) arrays. The main idea is to decompose the ReRAM channel, which is both non-ergodic and…
Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell…
The increasing complexity and energy demands of deep learning models have highlighted the limitations of traditional computing architectures, especially for edge devices with constrained resources. Spiking Neural Networks (SNNs) offer a…
Resistive Random Access Memory (ReRAM) based Processing In Memory (PIM) Accelerator has emerged as a promising computing architecture for memory intensive applications, such as Deep Neural Networks (DNNs). However, due to its immaturity,…
The memory physics induced unknown offset of the channel is a critical and difficult issue to be tackled for many non-volatile memories (NVMs). In this paper, we first propose novel neural network (NN) detectors by using the multilayer…
The practical NAND flash memory suffers from various non-stationary noises that are difficult to be predicted. Furthermore, the data retention noise induced channel offset is unknown during the readback process. This severely affects the…
Due to the crossbar array architecture, the sneak-path problem severely degrades the data integrity in the resistive random access memory (ReRAM). In this letter, we investigate the channel quantizer design for ReRAM arrays with multiple…
The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…
Deep learning-based recommendation models (DLRMs) are widely deployed in commercial applications to enhance user experience. However, the large and sparse embedding layers in these models impose substantial memory bandwidth bottlenecks due…
Resistive Random-Access-Memory (ReRAM) crossbar is a promising technique for deep neural network (DNN) accelerators, thanks to its in-memory and in-situ analog computing abilities for Vector-Matrix Multiplication-and-Accumulations (VMMs).…
Deep Neural Networks (DNNs), as a subset of Machine Learning (ML) techniques, entail that real-world data can be learned and that decisions can be made in real-time. However, their wide adoption is hindered by a number of software and…
Resistive Random-Access Memory (ReRAM) crossbar arrays are promising candidates for in-situ matrix-vector multiplication (MVM), a frequent operation in Deep Learning algorithms. Despite their advantages, these emerging non-volatile memories…
Spike-timing-dependent-plasticity (STDP) is an unsupervised learning algorithm for spiking neural network (SNN), which promises to achieve deeper understanding of human brain and more powerful artificial intelligence. While conventional…
Recent research demonstrated the promise of using resistive random access memory (ReRAM) as an emerging technology to perform inherently parallel analog domain in-situ matrix-vector multiplication -- the intensive and key computation in…
Resistive random-access memory (RRAM) is widely recognized as a promising emerging hardware platform for deep neural networks (DNNs). Yet, due to manufacturing limitations, current RRAM devices are highly susceptible to hardware defects,…
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…
Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…