Related papers: Quantum memory circuit for ion channel dynamics in…
Experiments on single ionic channels have contributed to a large extent to our current view on the function of cell membrane. In these experiments the main observables are the physical quantities: ionic concentration, membrane electrostatic…
With increasing communication rates via quantum channels, memory effects become unavoidable whenever the use rate of the channel is comparable to the typical relaxation time of the channel environment. We introduce a model of a bosonic…
We calculate the quantum capacity of an amplitude-damping channel with time correlated Markov noise, for two channel uses. Our results show that memory of the channel increases it's ability to transmit quantum information significantly. We…
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional…
Studies of the dynamics of a quantum system coupled to baths are typically performed by utilizing the Nakajima-Zwanzig memory kernel (${\mathcal{K}}$) or the influence functions ($\mathbf{{I}}$), especially when the dynamics exhibit memory…
Multi-spins tunneling cross-relaxations in an ensemble of weakly-coupled Ho$^{3+}$ ions, mediated by weak anisotropic dipolar interactions, can be evidenced by ac-susceptibility measurements in a high temperature regime. Based on a…
A time-dependent bias voltage on a tunnel junction generates a time-dependent modulation of its current fluctuations, and in particular of its variance. This translates into an excitation at frequency $\tilde{f}$ generating correlations…
Voltage-dependent ion channels determine the electric properties of axonal cell membranes. They not only allow the passage of ions through the cell membrane but also contribute to an additional charging of the cell membrane resulting in the…
Coherent resonant tunneling through an artificial molecule of quantum dots in an inhomogeneous magnetic field is investigated using an extended Hubbard model. Both the multiterminal conductance of an array of quantum dots and the persistent…
We develop a simple model of ionic current through neuronal membranes as a function of membrane potential and extracellular ion concentration. The model combines a simplified Poisson-Nernst-Planck (PNP) model of ion transport through…
In most studies of the channel capacity of quantum channels, it is assumed that the errors in each use of the channel are independent. However, recent work has begun to investigate the effects of memory or correlations in the error. This…
We investigate the multiple use of a ferromagnetic spin chain for quantum and classical communications without resetting. We find that the memory of the state transmitted during the first use makes the spin chain a qualitatively different…
For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we…
We describe a simple conductance-based model neuron that includes intra- and extra-cellular ion concentration dynamics and show that this model exhibits periodic bursting. The bursting arises as the fast spiking behavior of the neuron is…
Ion channels orchestrate the communication between cells and their environment. These are special proteins capable of changing their shape to allow ions to pass through membranes in response to stimuli like membrane tension. As the letters…
Recent advances in nanofluidics have enabled the confinement of water down to a single molecular layer. Such monolayer electrolytes show promise in achieving bio-inspired functionalities through molecular control of ion transport. However,…
We present a combined experimental and theoretical study to get insight into both memory and negative differential resistance (NDR) effect in organic memory devices. The theoretical model we propose is simply a one-dimensional metallic…
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error…
Electron tunneling between quantum Hall systems on the same two dimensional plane separated by a narrow barrier is studied. We show that in the limit where inelastic scattering time is much longer than the tunneling time, which can be…
One of the long-standing goals of quantum transport is to use the noise, rather than the average current, for information processing. However, achieving this requires on-demand control of quantum fluctuations in the electric current. In…