Related papers: Characterisation of SiC radiation detector technol…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
Detectors proposed for the International Linear Collider (ILC) incorporate a tungsten sampling calorimeter (`BeamCal') intended to reconstruct showers of electrons, positrons and photons that emerge from the interaction point of the…
4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC…
Scanning ion conductance microscopy (SICM) can image the surface topography of specimens in ionic solutions without mechanical probe--sample contact. This unique capability is advantageous for imaging fragile biological samples but its…
In the past decade, lithium niobate (LiNbO3 or LN) photonics, thanks to its heat-free and fast electro-optical modulation, second-order non-linearities and low loss, has been extensively investigated. Despite numerous demonstrations of…
CLLBC(Ce) and TLYC(Ce) are novel scintillation materials capable of measuring mixed gamma ray and neutron radiation fields that have gained significant interest in the areas of space and nuclear safety/security science. To date Geant4, the…
This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary of their measured characteristics. This includes an analysis…
Diamond and Silicon Carbide (SiC) are promising wide band-gap semiconductors for power electronics, SiC being more mature especially in term of large wafer size (that has reached 200 mm quite recently). Nitrogen impurities are often used in…
We report first results of laboratory tests of Si:As blocked-impurity-band (BIB) mid-infrared (4 to 28 um) detectors developed by IMEC. These prototypes feature 88 pixels hybridized on an integrated cryogenic readout electronics (CRE). They…
In the last years, optical readout of Micromegas gaseous detectors has been achieved by implementing a Micromegas detector on a glass anode coupled to a CMOS camera. Effective X-ray radiography was demonstrated using integrated imaging…
The high-luminosity high-energy Electron-Ion Collider (EIC) to be built at Brookhaven National Laboratory (BNL) will provide a clean environment to study several fundamental questions in the high energy and nuclear physics fields. A high…
The Electron-ion collider in China (EicC) is a proposed future electron-ion collider designed to achieve a high luminosity, with a center-of-mass energy ranging from 15 to 20 GeV. Excellent particle identification (PID) with extensive…
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…
Resistive AC-coupled Silicon Detectors (RSDs) are silicon sensors which provide high temporal and spatial resolution. The RSD is a candidate sensor to be used in future tracking detectors with the objective of obtaining '4D' tracking, where…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical…
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon…
A long-standing limitation of semiconductor neutron detectors is the lack of a scalable solution to make large area instruments. Neutron detectors are used in a wide range of applications, including the nuclear industry, safeguarding…
Particle IDentification (PID) is a central requirement of the experiments at the future EIC. Hadron PID at high momenta by RICH techniques requires the use of low density gaseous radiators, where the challenge is the limited length of the…
In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring…