Related papers: Ultra-sensitive Short-Wave Infrared Single-Photon …
The ultrafast detection of single photons is currently restricted by the limited time resolution (a few picoseconds) of the available single-photon detectors. Optical gates offer a faster time resolution, but so far they have been mostly…
SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor…
We demonstrate a novel MIR methane sensor shifting measurement wavelength to SWIR (1.55$\mu$m) by using non-linear interferometry. The technique exploits the interference effects seen in three-wave mixing when pump, signal, and idler modes…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows…
Infrared (IR) radiation detectors are used in numerous applications from thermal imaging to spectroscopic gas sensing. Obtaining high speed and sensitivity, low-power operation and cost-effectiveness with a single technology remains to be a…
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address…
We present and theoretically analyse the performance of an innovative non-local superconducting single-photon detector. The device operates thanks to the energy-to-phase conversion mechanism, where the energy of the absorbed single-photon…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and…
Advances in silicon (Si) photonics at submicrometer wavelengths are unlocking new opportunities to realize miniaturized, scalable optical systems for biophotonics, quantum information, imaging, spectroscopy, and displays. Addressing this…
We propose a sensitive new detector based on Cooper pair breaking in a superconductor. The quantum capacitor detector (QCD) exploits the extraordinary sensitivity of superconducting single-electron devices to the presence of quasiparticles…
We present a linearly arrayed, 16-element, superconducting nanowire single-photon detector with 83.4$\%$ system detection efficiency at 1550 nm and a mean per-element dead-time of 9.6-ns, enabling counting at 1 giga-count per second with…
We demonstrate a 16-pixel array of radio-frequency superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, reducing the required bias and readout lines to a single…
Single-photon resolution (SPR) detectors can tell the difference between incoming wave packets of n and n+1 photons. Such devices are especially important for linear optical quantum computing with projective measurements. However, in this…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…
We demonstrated a laser depth imaging system based on the time-correlated single-photon counting technique, which was incorporated with a low-jitter superconducting nanowire single-photon detector (SNSPD), operated at the wavelength of 1550…
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is…