Related papers: Island formation in heteroepitaxial growth
We investigate the formation and the coarsening dynamics of islands in a strained epitaxial semi-conductor film. These islands are commonly observed in thin films undergoing a morphological instability due to the presence of the elasto…
We study the morphological evolution of strained islands in growing crystal films by use of a continuum description including wetting, elasticity and deposition flux. Wetting breaks translational invariance, allowing the flux to tune…
We consider a variational model for the formation of islands in heteroepitaxial growth on unbounded domains. We first derive the scaling regimes of the minimal energy in terms of the volume of the film and the amplitude of the…
We introduce an off-lattice model with continuous particle distances and pair-potential interactions which allows for the efficient simulation of strained heteroepitaxial growth by means of kinetic Monte Carlo (KMC) simulations. We discuss…
We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a…
We study the formation and evolution of coherent islands on lattice mismatched epitaxially strained films. Faceted islands form in films with aniostropic surface tension. Under annealing, these islands ripen until a stable array is formed,…
We study the morphological evolution of strained heteroepitaxial films using a kinetic Monte Carlo method in three dimensions. The elastic part of the problem uses a Green's function method. Isolated islands are observed under deposition…
We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation free island formation, and ripening. The derived phase diagram provides a detailed…
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…
We consider the influence of realistic island diffusion rates to homoepitaxial growth on metallic surfaces using a recently developed rate equation model which describes growth in the submonolayer regime with hyperthermal deposition. To…
We reexamine the density of two dimensional islands in the submonolayer regime of a homoepitaxially growing surface using the coarse grained Monte Carlo simulation with random sequential updating rather than parallel updating. It turns out…
Effect of an anisotropic detachment on a heteroepitaxial island shape is studied by means of a kinetic Monte Carlo simulation of a square lattice gas model. Only with molecular deposition followed by surface diffusion, islands grow in a…
We have performed Kinetic Monte Carlo simulation to study the effect of diffusion anisotropy and bonding anisotropy on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple…
Using kinetic Monte Carlo simulations, we develop a framework to relate morphological properties and microscopic dynamics during island growth, coalescence, and initial formation of continuous heteroepitaxial films. The average island width…
Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $\Theta$ in the submonolayer aggregation regime of…
A model of submonolayer thin film growth is studied, where the attachment of atoms to island edges is hindered by an energy barrier. A novel behavior of the density of islands, N_s, is predicted as a function of flux F and temperature T.…
We investigate the influence of intermixing on heteroepitaxial growth dynamics, using a two-dimensional point island model, expected to be a good approximation in the early stages of epitaxy. In this model, which we explore both…
Square lattice gas models for heteroepitaxial growth are studied by means of kinetic Monte Carlo simulations, in order to find a possible origin of anisotropic island shape observed in growth experiments of long organic molecules. When…
A solid-on-solid model is generalized to study the formation of Ge pyramid islands bounded by (105) facets on Si(100) substrates in two dimensions. Each atomic column is not only characterized by the local surface height but also by two…
We computed by a Monte Carlo method derived from the Solid on Solid model, the evolution of a polycrystalline thin film deposited on a substrate during thermal treatment. Two types of substrates have been studied: a single crystalline…