Related papers: Orthogonal Spin-Orbit Torque-Induced Deterministic…

Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…

One of recent surprising discoveries is the unusual anisotropic magnetoresistance (UAMR) that depends on two magnetization components perpendicular to the current differently, in contrast to the conventional anisotropic magnetoresistance…

We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall bars on the antiferromagnetic NiO(111) single crystal. An SMR with a sign opposite of conventional SMR is observed over a wide range of temperatures as well as magnetic…

To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…

In our JunPy package, we have combined the first-principles calculated self-consistent Hamiltonian with divide-and-conquer technique to successfully determine the magnetic anisotropy (MA) in an Fe/MgO/Fe magnetic tunnel junction (MTJ). We…

Magnetic rare-earth orthoferrites $R$FeO$_3$ host a variety of functional properties from multiferroicity and strong magnetostriction, to spin-reorientation transitions and ultrafast light-driven manipulation of magnetism, which can be…

We consider magnetostriction in magnetic materials. Starting from a microscopic lattice model of the magneto-elastic coupling, we derive the continuum magnetostriction Hamiltonian in cubic ferromagnets and antiferromagnets. In ferromagnets,…

We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on…

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

Electrical control of structural and physical properties is a long-sought, but elusive goal of contemporary science and technology. We demonstrate that a combination of strong spin-orbit interactions (SOI) and a canted antiferromagnetic…

Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic…

Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to external magnetic fields and the…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the…

Electric control of N\'eel vector is a central task of antiferromagnetic (AFM) spintronics. The major scheme so far relies on the linear N\'eel torque, which however is restricted to AFMs with broken inversion symmetry. Here, we propose a…

Antiferromagnets (AFM) with a nonrelativistic spin splitting (NSS) of electronic bands expand the range of spin-dependent phenomena and their applications. A crucial understanding for both of them pertains to the inherent spin dynamics. We…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

Phase separation naturally occurs in a variety of magnetic materials and it often has a major impact on both electric and magnetotransport properties. In resistive switching systems, phase separation can be created on demand by inducing…

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…