Related papers: Anomalous switching pattern in the ferrimagnetic m…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below…
Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
There has been much interest recently in the discovery of thermally induced magnetisation switching, where a ferrimagnetic system can be switched deterministically without and applied magnetic field. Experimental results suggest that the…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
We have studied the magnetization reversal process in FM/AFM bilayer structures through of spin dynamics simulation. It has been observed that the magnetization behavior is different at each branch of the hysteresis loop as well as the…
In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
It is shown that magnetic states and field-driven reorientation transitions in synthetic antiferromagnets crucially depend on contributions of higher-order anisotropies. A phenomenological macrospin model is derived to describe the magnetic…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…
We analytically model the magnetization switching time of a biaxial ferromagnet driven by an antidamping-like spin torque. The macrospin magnetization dynamics is mapped to an energy-flow equation, wherein a rational-function approximation…
Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many…
Based on the Bogoliubov-de Gennes equations, we investigate the transport of the Josephson current in a S/$f_L$-F$_1$-$f_C$-F$_2$-$f_R$/S junction, where S and F$_{1,2}$ are superconductors and ferromagnets, and $f_{L, C, R}$ are the left,…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Magnetization reversal in exchange-spring magnet films has been investigated by a First Order Reversal Curve (FORC) technique and vector magnetometry. In Fe/epitaxial-SmCo films, the reversal proceeds by a reversible rotation of the Fe soft…
Experimentally observed ultrafast all-optical magnetization reversal in ferrimagnetic metals and heterostructures based on antiferromagnetically coupled ferromagnetic $d-$ and $f-$metallic layers relies on intricate energy and angular…