Related papers: Quantifying Crystallographic Orientation Effects o…
Spin-orbit torque (SOT) has been extensively studied as a key mechanism in spintronics applications. However, conventional SOT materials limit the spin polarization direction to the in-plane orientation, which is suboptimal for efficient…
Properties of crystalline materials are closely linked to microstructure arising from the spatial arrangement, orientation, and phase of nanocrystals. Rapid characterization of crystalline microstructure can accelerate the identification of…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
The transport properties on the two-dimensional surface of coupled multilayer heterostructures are studied in the integer quantum Hall states. We emphasize the criticality of the surface state and the phase coherent transport properties in…
A model of coherent tunneling, which combines multi-orbital tight-binding approximation with Landauer-B\"uttiker formalism, is developed and applied to all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
We have studied tunnel magnetoresistance (TMR) in junctions with 3d ferromagnetic electrodes. Previously we predicted that defects in the barrier would result in reduced effective polarization P of the impurity assisted current. This is…
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…
Magnetoelectronics is mainly digital, i.e. governed by up and down magnetizations. In contrast, analogue magnetoelectronics makes use of phenomena occuring for non-collinear magnetization configurations. Here we review theories which have…
Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI$_3$ due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moir\'e stacking - with potential…
We develop a theory of the anisotropic magnetoresistance (AMR) effects of arbitrary directions of current and magnetization for ferromagnets. Here, we use the electron scattering theory with the $s$--$s$ and $s$--$d$ scattering processes,…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…
We have studied the influence of the transverse size of a magnetic tunnel nanojunction on the magnitude of the magnetoresistance. During modeling, the size of the right contact was fixed, while the size of the left one gradually changed…
Thermally induced spin-dependent transport across magnetic tunnel junctions is theoretically investigated. We analyze the thermal analog of Slonczewski's model (as well as its limiting case---Julliere's model) of tunneling magnetoresistance…
For spin-polarized junctions of ferromagnetically contacting multiple conductive paths, such as ferromagnet (FM)/atomic wires/FM and FM/carbon nanotubes/FM junctions, we theoretically investigate spin-dependent transport to elucidate the…
Spin-dependent electronic transport through multiferroic Co/PbTiO$_{3}$/Co tunnel junctions is studied theoretically. Conductances calculated within the Landauer-B\"uttiker formalism yield both a large tunnel magnetoresistance (TMR) and a…
Angle dependent magnetoresistance experiments on organic conductors exhibit a wide range of angular oscillations associated with the dimensionality and symmetry of the crystal structure and electron energy dispersion. In particular,…
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model…
The ground state of colloidal magnetic particles in a modulated channel are investigated as function of the tilt angle of an applied magnetic field. The particles are confined by a parabolic potential in the transversal direction while in…