Related papers: Probing g-tensor reproducibility and spin-orbit ef…
The spin-orbit interaction of holes in zinc-blende semiconductors is much stronger than that of electrons. This makes the hole systems very attractive for possible spintronics applications. In three dimensions (3D) dynamics of holes is…
We study Zeeman splitting of zone-center subband edges in a cylindrical hole wire subject to a magnetic field parallel to its axis. The g-factor turns out to fluctuate strongly as a function of wire-subband index, assuming values that…
We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra…
We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing…
A central challenge for scalable quantum networks is the realization of coherent interfaces between stationary qubits and telecom-band photonic qubits for long-distance entanglement distribution. Semiconductor quantum dots emitting at…
We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…
The effect of spin-orbit interaction was studied in a high-quality $p$-AlGaAs/GaAs/AlGaAs structure with a square quantum well using acoustic methods. The structure grown on a GaAs (100) substrate was symmetrically doped with carbon on both…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits,…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical…
The magnetization of semiconductor quantum dots in the presence of spin-orbit coupling and interactions is investigated numerically. When the dot is occupied by two electrons we find that a level crossing between the two lowest many-body…
Manipulating spin-orbit coupling (SOC) is important for devices such as spin-orbit torque based memory and its understanding is neccessary to answer several fundamental open questions in triplet state superconductivity, topological…
We present a unifying picture of the magnetic in-plane anisotropies of two-dimensional superconductors based on transition metal dichalcogenides. The symmetry considerations are first applied to constrain the form of the conductivity…
Ensembles of dopants have widespread applications in quantum technology. The miniaturization of corresponding devices is however hampered by dipolar interactions that reduce the coherence at increased dopant density. We theoretically and…
This study explores the optical properties of quantum dots doped with a Ni$^{2+}$ ion that interacts with a charged exciton. Systematic magneto-optical analysis reveals that the strain distribution at the Ni$^{2+}$ site significantly…