Related papers: Quench switching of Mn2As
Antiperovskite nitrides with the general formula M$_3$N have attracted significant attention due to their tunable electronic and magnetic properties. Among them are many cobalt-based compounds predicted to exhibit high thermodynamic…
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high Curie temperature and investigated the crystalline…
Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac…
We report the controllable growth and the intriguing transport behavior of high-spin-polarization epitaxial L21-Co2MnAl films, which exhibit a low-temperature (T) resistivity upturn with pronounced T1/2 dependence, close relevance to…
In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
Magnetoelastic effects in antiferromagnetic CuMnAs are investigated by applying dynamic strain in the 0.01% range through surface acoustic waves in the GaAs substrate. The magnetic state of the CuMnAs/GaAs is characterized by a multitude of…
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $\omega$ full width half max of $7.7^{''}$…
The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission electron microscopy. At room temperature, MnAs layers…
Magnetic relaxation and critical current density have been measured on a $MgB_2$ thin film in a wide region of temperature with the magnetic field up to 8 T. The irreversibility line has also been determined. It is found that the relaxation…
Mn$_2$Au is an important antiferromagnetic (AF) material for spintronics applications. Due to its very high N\'eel temperature of about 1500 K, some of the basic properties are difficult to explore, such as the AF susceptibility and the…
Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are…
EuSn2As2 with layered rhombohedral crystal structure is proposed to be a candidate of intrinsic antiferromagnetic (AFM) topological insulator. Here, we have investigated systematic magnetoresistance (MR) and magnetization measurements on…
Crystals of SrMn2Sb2 and BaMn2Sb2 were grown using Sn flux and characterized by powder and single-crystal x-ray diffraction, respectively, and by single-crystal electrical resistivity rho, heat capacity Cp, and magnetic susceptibility chi…
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
Tetragonal CuMnAs was the first antiferromagnet where reorientation of the N\'eel vector was reported to occur by an inverse spin galvanic effect. A complicating factor in the formation of phase-pure tetragonal CuMnAs is the formation of an…
The antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure is a promising material for the AFM spintronics. The resistivity measurements indicate the presence of defects about whose types and concentrations is more speculated as…
We investigate temperature quenches across the reentrant phase transition of the antiferromagnetic Ising model in a magnetic field and show that the strong direct and inverse Mpemba effects arise when quenches terminate in the paramagnetic…
We report on the structural and magnetic properties of single and double atomic layers of Mn on a clean and unreconstructed Nb(110) substrate. Low-temperature scanning tunneling spectroscopy measurements reveal a proximity-induced…