Related papers: Multi-probe analysis to separate edge currents fro…
The edge Hall conductivity is shown to be an integer multiple of $e^2/h$ which is almost surely independent of the choice of the disordered configuration. Its equality to the bulk Hall conductivity given by the Kubo-Chern formula follows…
Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
We consider a four-terminal setup of a two-dimensional topological insulator (quantum spin Hall insulator) with local tunneling between the upper and lower edges. The edge modes are modeled as helical Luttinger liquids and the…
We present a current and charge conserving theory for the low frequency admittance of a two-dimensional electron gas connected to ideal metallic contacts and subject to a quantizing magnetic field. In the framework of the edge-channel…
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk…
The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Electrical and thermal transport on a fractional quantum Hall edge are determined by topological quantities inherited from the corresponding bulk state. While electrical transport is the standard method for studying edges, thermal transport…
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…
We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the…
The quantum anomalous Hall effect shows great promise for realization of the ohm without the need for an external magnetic field. The most mature material platform is magnetically doped topological insulators. In these materials, precise…
In this work we use self-consistent method considering a two dimensional electron gas system in the integer quantum Hall regime, to calculate the temperature induced decay of incompressible stripes. There are two types of incompressible…
We predict by first-principles calculations that thin films of Cr-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulator have gapless non-chiral edge states coexisting with the chiral edge state. Such gapless non-chiral states are not…
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we…
Understanding possible mechanisms, which can lead to suppression of helical edge transport in Quantum Spin Hall (QSH) systems, attracted huge attention right after the first experiments revealing the fragility of the ballistic conductance.…
Tunneling conductance $G(T)$ through a constricted point contact is studied for the $\nu=2/3$ spin-singlet edges. Including spin-flip tunneling, Zeeman splitting and random magnetic impurities, we discuss the various crossovers of $G(T)$ as…
Three-dimensional topological insulators of finite thickness can show the quantum Hall effect (QHE) at the filling factor $\nu=0$ under an external magnetic field if there is a finite potential difference between the top and bottom…
Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…