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Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the…

The manipulation of single spins through spin-polarized tunneling opens new routes for quantum control at the atomic scale. We present a theoretical framework describing spin-transfer, spin torques and spin resonance in molecular quantum…

Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum…

One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…

The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…

Mesoscale and Nanoscale Physics · Physics 2018-10-03 S. D. Liles , R. Li , C. H. Yang , F. E. Hudson , M. Veldhorst , A. S. Dzurak , A. R. Hamilton

We study single and double quantum dots defined electrostatically within silicene. The spin-valley structure of the confined single- and two-electron system is determined and the effects of the intervalley scattering induced by the crystal…

Mesoscale and Nanoscale Physics · Physics 2018-10-17 B. Szafran , D. Zebrowski

Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a…

Superconductivity · Physics 2024-09-24 Thibault Sohier , Marco Gibertini , Ivar Martin , Alberto F. Morpurgo

Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 Zhen Zhan , Yipei Zhang , Pengfei Lv , Hongxia Zhong , Guodong Yu , Francisco Guinea , Jose Angel Silva-Guillen , Shengjun Yuan

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) MX2 (M=W, Mo, Nb, and X=Te, Se, S) with strong spin-orbit coupling (SOC) possess plenty of novel physics including superconductivity. Due to the Ising SOC, monolayer NbSe$_2$ and…

We review progress on the spintronics proposal for quantum computing where the quantum bits (qubits) are implemented with electron spins. We calculate the exchange interaction of coupled quantum dots and present experiments, where the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Hans-Andreas Engel , L. P. Kouwenhoven , Daniel Loss , C. M. Marcus

We propose to engineer time-reversal-invariant topological insulators in two-dimensional (2D) crystals of transition metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop…

Mesoscale and Nanoscale Physics · Physics 2014-08-13 M. A. Cazalilla , H. Ochoa , F. Guinea

Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could…

This review describes the physics of spins in quantum dots containing one or two electrons, from an experimentalist's viewpoint. Various methods for extracting spin properties from experiment are presented, restricted exclusively to…

Mesoscale and Nanoscale Physics · Physics 2011-11-09 R. Hanson , L. P. Kouwenhoven , J. R. Petta , S. Tarucha , L. M. K. Vandersypen

Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic…

Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…

Mesoscale and Nanoscale Physics · Physics 2008-04-12 L. S. Levitov , E. I. Rashba

The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…

Mesoscale and Nanoscale Physics · Physics 2020-11-18 Nicholas E. Penthorn , Joshua S. Schoenfield , Lisa F. Edge , HongWen Jiang

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…

Mesoscale and Nanoscale Physics · Physics 2014-10-30 Niklas Rohling , Maximilian Russ , Guido Burkard

Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a…

Mesoscale and Nanoscale Physics · Physics 2020-02-05 Matthew Brooks , Guido Burkard

Observing constituent particles with fractional quantum numbers in confined and deconfined states is an interesting and challenging problem in quantum many-body physics. Here we further explore a computational scheme [Y. Tang and A. W.…

Strongly Correlated Electrons · Physics 2016-01-05 Ying Tang , Anders W. Sandvik

Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra of a few-electron silicon metal-oxide-semiconductor quantum…

Mesoscale and Nanoscale Physics · Physics 2012-10-12 C. H. Yang , W. H. Lim , N. S. Lai , A. Rossi , A. Morello , A. S. Dzurak