Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$
Abstract
Spin-valley locking in the band structure of monolayers of MoS and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.
Keywords
Cite
@article{arxiv.1907.06318,
title = {Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$},
author = {J. Y. Liu and J. Yu and J. L. Ning and H. M. Yi and L. Miao and L. J. Min and Y. F. Zhao and W. Ning and K. A. Lopez and Y. L. Zhu and T. Pillsbury and Y. B. Zhang and Y. Wang and J. Hu and H. B. Cao and F. Balakirev and F. Weickert and M. Jaime and Y. Lai and Kun Yang and J. W. Sun and N. Alem and V. Gopalan and C. Z. Chang and N. Samarth and C. X. Liu and R. D. Mcdonald and Z. Q. Mao},
journal= {arXiv preprint arXiv:1907.06318},
year = {2021}
}
Comments
Updated acknowledgement