Related papers: Decoherence of Quantum Emitters in hexagonal Boron…
Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both…
Hexagonal boron nitride (hBN) has emerged as a promising ultrathin host of single photon emitters (SPEs) with favorable quantum properties at room temperature, making it a highly desirable element for integrated quantum photonic networks.…
We demonstrate a post-fabrication method that deterministically integrates hexagonal boron nitride (hBN) single-photon emitters (SPEs) onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry-transferred onto…
Hexagonal boron nitride (hBN) is a promising material for next-generation semiconductor and optoelectronic devices due to its wide bandgap and remarkable optical properties. To apply this material in the semiconductor industry, it is…
Single photon emitters in hexagonal boron nitride have gathered a lot of attention due to their favourable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these…
Integration of solid state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride have…
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, precise identification and control of defects are key parameters to…
The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has been extensively investigated as it offers a novel playground for two-dimensional quantum sensing, with ultimate proximity to target samples. However, its…
Hexagonal boron nitride (hBN) is an excellent host for solid-state single phonon emitters. Experimental observed emission ranges from infrared to ultraviolet. The emission centers are generally attributed to either intrinsic or extrinsic…
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate…
Hexagonal boron nitride (hBN) has emerged as an excellent host material for generating room temperature single photons exhibiting high brightness and spin-photon entanglement. However, challenges in improving purity, stability, and…
Wurtzite boron nitride (wBN) is a polymorph of boron nitride and serves as an intermediate phase in the transition from hBN to cBN under high pressure and temperature conditions. Owing to these extreme synthesis conditions, wBN likely…
We demonstrate the fabrication of individual nanopores in hexagonal boron nitride (hBN) with atomically precise control of the pore size. Previous methods of pore production in other 2D materials create pores of irregular geometry with…
Hexagonal boron nitride (hBN) is an emerging layered material that plays a key role in a variety of two-dimensional devices, and has potential applications in nanophotonics and nanomechanics. Here, we demonstrate the first cavity…
Color centers in h-BN are among the brightest emission centers known yet the origins of these emission centers are not well understood. Here, using first-principles calculations in combination with the generating function method, we…
Quantum enhanced sensing exploits the coherent dynamics of two-level systems (TLSs) to achieve exceptional sensitivities and measurement precision that surpass classical detection limits. While platforms such as nitrogen vacancy centers in…
Two dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide bandgap semiconductors as hosts of single photon emitters. Amongst different layered materials, bright and robust defect-based…
Quantum emitters in two-dimensional hexagonal boron nitride (h-BN) have generated significant interest due to observations of ultra-bright emission made at room temperature. The expectation that solid-state emitters exhibit broad…
Key properties of nine possible defect sites in hexagonal boron nitride (h-BN) are predicted using density-functional theory and are corrected by applying results from high-level ab initio calculations. Observed h-BN electron-paramagnetic…
Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such…