Related papers: LLC Intra-set Write Balancing
In recent years, researchers have explored use of non-volatile devices such as STT-RAM (spin torque transfer RAM) for designing on-chip caches, since they provide high density and consume low leakage power. A common limitation of all…
Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…
Last-Level Cache (LLC) represents the bulk of a modern CPU processor's transistor budget and is essential for application performance as LLC enables fast access to data in contrast to much slower main memory. However, applications with…
Non-volatile memory (NVM) technologies are interesting alternatives for building the on-chip Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but each write operation slightly…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…
In order to meet the needs of high performance computing (HPC) in terms of large memory, high throughput and energy savings, the non-volatile memory (NVM) has been widely studied due to its salient features of high density, near-zero…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
Current day processors employ multi-level cache hierarchy with one or two levels of private caches and a shared last-level cache (LLC). An efficient cache replacement policy at LLC is essential for reducing the off-chip memory transfer as…
To mitigate the impact of noise and interference on multi-level-cell (MLC) flash memory with the use of low-density parity-check (LDPC) codes, we propose a dynamic write-voltage design scheme considering the asymmetric property of raw bit…
This paper presents a practical writing/reading scheme in nonvolatile memories, called balanced modulation, for minimizing the asymmetric component of errors. The main idea is to encode data using a balanced error-correcting code. When…
Large Language Models (LLMs) have achieved unprecedented success across various applications, but their substantial memory requirements pose significant challenges to current memory system designs, especially during inference. Our work…
Fault tolerance is one of the major design goals for HPC. The emergence of non-volatile memories (NVM) provides a solution to build fault tolerant HPC. Data in NVM-based main memory are not lost when the system crashes because of the…
Last-level cache (LLC) partitioning is a technique to provide temporal isolation and low worst-case latency (WCL) bounds when cores access the shared LLC in multicore safety-critical systems. A typical approach to cache partitioning…
Battery-less technology evolved to replace battery technology. Non-volatile memory (NVM) based processors were explored to store the program state during a power failure. The energy stored in a capacitor is used for a backup during a power…
As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…
The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…
The Key-Value (KV) cache is integral to efficient autoregressive inference in large language models (LLMs), yet its unbounded growth in stateful multi-turn scenarios presents major challenges. This paper examines the interplay between KV…
SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…
PCM is a popular backing memory for DRAM main memory in tiered memory systems. PCM has asymmetric access energy; writes dominate reads. MLC asymmetry can vary by an order of magnitude. Many schemes have been developed to take advantage of…