Related papers: Heracles: A HfO2 Ferroelectric Capacitor Compact M…
TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment…
Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and…
Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has been greatly hindered by reliability issues, with fatigue being…
Molecular ferroelectrics have captured immense attention due to their superiority over inorganic oxide ferroelectrics, such as environmentally friendly, low-cost, flexible, foldable. However, the mechanisms of ferroelectric switching and…
The discovery of ferroelectricity in HfO$_2$-based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density non-volatile memories. The functional performances…
In this work, we present a parallel, fully-distributed finite element numerical framework to simulate the low-frequency electromagnetic response of superconducting devices, which allows to efficiently exploit HPC platforms. We select the…
HfO$_2$-based ferroelectrics are one of the most actively developed functional materials for memory devices. However, in HfO$_2$-based ferroelectric devices, dielectric breakdown is a main failure mechanism during repeated polarization…
We present a massively parallel, 3D phase-field simulation framework for modeling ferro-electric materials based scalable logic devices. We self-consistently solve the time-dependent Ginzburg Landau (TDGL) equation for ferroelectric…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films and discover a low-energy variant (hex-OR-2*2-P) with energy…
High Energy Physics (HEP) experiments are making increasing use of GPUs and GPU dominated High Performance Computer facilities. Both the software and hardware of these systems are rapidly evolving, creating challenges for experiments to…
The Ising model is a simple statistical model for ferromagnetism. There are analytic solutions for low dimensions and very efficient Monte Carlo methods, such as cluster algorithms, for simulating this model in special cases. However most…
Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle…
An RF helical deflector is a type of electron and ion optics device that applies a time-dependent rotating transverse electric or magnetic field by means of time-dependent RF voltage applied on two opposite conducting helical structures…
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal…
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle…
Compact representations of fermionic Hamiltonians are necessary to perform calculations on quantum computers that lack error-correction. A fermionic system is typically defined within a subspace of fixed particle number and spin while…
In this paper we proclaim excellent variation control in Hf$_{0.5}$Zr$_{0.5}$O$_2$ based ferroelectric films obtained by germination of large ferroelectric domain via extended duration of thermal annealing. 10nm thick…