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Related papers: Surface Structuring of Patterned 4H-SiC Surfaces U…

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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy…

Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in pure liquid silicon for investigating the structure and morphology evolution of the SiC surface as a function of both azimuthal and off-axis angles. Different…

Materials Science · Physics 2022-02-28 Xinming Xing , Takeshi Yoshikawa , Didier Chaussende

The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation…

Applied Physics · Physics 2023-07-18 R. Cecchini , A. Fabrizi , C. Paternoster , W. Zhang , G. Roventi

Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a…

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2…

Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt…

Steps with spacings of microns form on top of mesas fabricated on Si(111) that is annealed at temperatures where sublimation becomes important. Upon annealing, mesas first develop ridges along their edges, effectively creating craters which…

Materials Science · Physics 2009-11-10 Kee-Chul Chang , Jack M. Blakely

Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…

Materials Science · Physics 2015-06-19 Filip Krzyzewski , Magdalena A. Zaluska-Kotur

This paper reports on formation of high aspect micro patterns on low temperature co-fired ceramic (LTCC) substrates by integrating micro inkjetting with electroless plating. Micro inkjetting was realized by using an inkjetting printer that…

Other Computer Science · Computer Science 2008-12-18 P. W. Gian , Xuechuan Shan , Y. N. Liang , B. K. Lok , C. W. Lu , B. L. Ooi

We document a sequence of bifurcations and elastic patterns in sheared bent sheets of intermediate aspect ratio. The sheets undergo inversion of curvature through the passage of localized features, often in S-shaped pairs. Nested…

Soft Condensed Matter · Physics 2026-02-18 D. Gimeno , B. K. Meghwar , G. Fisher , R. S. Hutton , E. Hamm , J. A. Hanna

We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two…

Materials Science · Physics 2015-08-10 Christopher James Kirkham , Tomoya Ono

The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution…

Materials Science · Physics 2010-11-23 L. V. Arapkina , V. A. Yuryev , V. M. Shevlyuga , K. V. Chizh

We report total-energy calculations based on the density-functional theory that clarify microscopic mechanisms of initial stage of graphene formation on the SiC(0001) surface. We explore favorable reactions for desorption of either Si or C…

Materials Science · Physics 2016-11-21 Fumihiro Imoto , Jun-Ichi Iwata , Mauro Boero , Atsushi Oshiyama

Engineering surfaces that promote rapid drop detachment is of importance to a wide range of applications including anti-icing, dropwise condensation6, and self-cleaning. Here we show how superhydrophobic surfaces patterned with lattices of…

Soft Condensed Matter · Physics 2014-06-13 Yahua Liu , Lisa Moevius , Xinpeng Xu , Tiezheng Qian , Julia M Yeomans , Zuankai Wang

This letter reports on the femtosecond laser fabrication of gradient-wettability micro/nano- patterns on Si surfaces. The dynamics of directional droplet spreading on the surface tension gradients developed is systematically investigated…

Fluid Dynamics · Physics 2015-09-16 I. Paradisanos , C. Fotakis , S. H. Anastasiadis , E. Stratakis

Micro-cantilevers (MCs) are widely used in sensing, probing and a variety of other purposes. Apart from Si, the most versatile material in the micro domain, SiO2 MCs have attracted much attention lately. In this study, fabrication of SiO2…

Applied Physics · Physics 2017-07-03 Sagnik Middya , K. Prabakar

In recent years, there has been extensive research on planar metasurfaces capable of arbitrarily controlling scattered fields. However, rigorous studies on conformal metasurfaces, such as those that are cylindrical, have been few in number…

Applied Physics · Physics 2023-07-19 Chun-Wen Lin , Anthony Grbic

The fracture toughness of Al/SiC nanolaminates with different layer thicknesses (in the range 10 to 100 nm) was measured by means of micropillar splitting and bending of a notched beam. The crack plane was perpendicular to the layers in the…

Materials Science · Physics 2020-09-09 L. W. Yang , C. R. Mayer , N. Chawla , J. LLorca , J. M. Molina-Aldareguía

We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three…

Materials Science · Physics 2009-09-30 Valery Borovikov , Andrew Zangwill

Samples of $\alpha$-SiC have been sintered with liquid phase (LPS) to 1950 $^\circ$C, in atmosphere of argon and processing times between 1 and 7 hours. Using scanning electron microscopy (SEM) the microstructure of the samples has been…

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