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We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is…

Materials Science · Physics 2009-11-13 J. Y. Jo , S. M. Yang , T. H. Kim , H. N. Lee , J. -G. Yoon , S. Park , Y. Jo , M. H. Jung , T. W. Noh

First principles calculations were performed to study the ground state electronic properties of BaFeO3 (BFO) within the density functional theory (DFT). Adopting generalized gradient approximation (GGA) exchange and correlation functional…

Materials Science · Physics 2007-05-23 Hong-Jian Feng , Fa-Min Liu

Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 15 nm, and decreases slowly as d increases above 15 nm. This…

Materials Science · Physics 2009-11-11 J. Y. Jo , Y. S. Kim , T. W. Noh , Jong-Gul Yoon , T. K. Song

The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic…

Applied Physics · Physics 2019-09-18 M. J. Han , E. A. Eliseev , A. N. Morozovska , Y. L. Zhu , Y. L. Tang , Y. J. Wang , X. W. Guo , X. L. Ma

Mechanical displacement in commonly used piezoelectric materials is typically restricted to linear or biaxial in nature and to a few percent of the material dimensions. Here, we show that free-standing BaTiO$_3$ membranes exhibit…

The photonic modes mediated absorption dynamics at femtosecond time scales along with the control of spontaneous emission tunability are investigated all-dielectric optical microcavity having BaTiO3 (BTO) as defect layer. The…

First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while…

Materials Science · Physics 2013-02-01 Hong-Jian Feng

Interactions between grain boundaries and domain walls were extensively studied in ferroelectric films and bicrystals. This knowledge, however, has not been transferred to polycrystalline ceramics, in which the grain size represents a…

Materials Science · Physics 2020-02-25 J. Schultheiß , S. Checchia , H. Uršič , T. Frömling , J. E. Daniels , B. Malič , T. Rojac , J. Koruza

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 T. H. Kim , S. -H. Baek , S. M. Yang , S. Y. Jang , D. Ortiz , T. K. Song , J. -S. Chung , C. -B. Eom , T. W. Noh , J. -G. Yoon

Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very…

We investigate the impact of OH- ions incorporation on the lattice strain and spontaneous polarization of BaTiO3 nanorods synthesized under different conditions. It was confirmed that the lattice strain depends directly on Ba…

We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$…

Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3. The co-existence of a ferroelectric phase and conductivity opens the door to new functionalities which may provide a unique route for novel…

Materials Science · Physics 2014-06-06 Xiaohui Liu , Yong Wang , J. D. Burton , Evgeny Y. Tsymbal

Since the discovery of polar topological textures, achieving efficient control and manipulation of them has emerged as a significant challenge for their integration into nanoelectronic devices. In this study, we use second principles…

Materials Science · Physics 2025-08-01 Fernando Gómez-Ortiz , Louis Bastogne , He Xu , Philippe Ghosez

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain…

Materials Science · Physics 2016-04-05 K. D. Belashchenko , O. Tchernyshyov , Alexey A. Kovalev , O. A. Tretiakov

Enhanced conductivity at ferroelectric domain walls in BiFeO$_3$ has been widely observed, yet the microscopic origins of this effect, including electronic contributions from domain-wall defects, are incompletely understood at the atomistic…

Materials Science · Physics 2025-07-17 Guo-Dong Zhao , Ismaila Dabo , Long-Qing Chen

Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent local electronic properties is often debated, however, as…

We report the epitaxial growth of BiFeO3 by pulsed electron deposition and the resulting crystal quality, magnetic and nanoscale switching properties. X-ray diffraction shows high quality single phase, epitaxial (001) oriented films grown…

Materials Science · Physics 2015-06-12 Hongxue Liu , Ryan Comes , Yonghang Pei , Jiwei Lu , Stuart Wolf

Previous experiments with BaTiO$_3$ single crystals have shown that application of the electric field in the vicinity of the ferroelectric phase transition can be used to introduce peculiar persisting ferroelectric domain walls, accompanied…

Materials Science · Physics 2024-10-31 P. S. Bednyakov , J. Hlinka

Domain walls in AlO$_x$/SrTiO$_3$ (ALO/STO) interface devices at low temperatures give a rise to a new signature in the electrical transport of two-dimensional carrier gases formed at the surfaces or interfaces of STO-based…

Mesoscale and Nanoscale Physics · Physics 2021-07-21 P. W. Krantz , V. Chandrasekhar
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