Related papers: Spin-Orbit Torque Driven Chiral Domain Wall Motion…

Mn$_3$Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial $c$-plane Mn$_3$Sn thin films have been grown on a…

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is…

Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch…

We show that proper control of magnetization textures can be achieved in noncollinear antiferromagnets. This opens the versatile toolbox of domain-wall manipulation in the context of a different family of materials. In this way, we show…

Understanding the domain wall (DW) dynamics in magnetic nanowires (NW) is crucial for spintronic-based applications demanding the use of DWs as information carriers. This work focuses on the dynamics of a DW displacing along a bent NW with…

We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than…

Using transmission electron microscopy, we investigate the thermally activated motion of domain walls (DWs) between two positions in permalloy (Ni80Fe20) nanowires at room temperature. We show that this purely thermal motion is well…

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of…

We investigate the formation of stable one-dimensional N\'eel walls in a ferromagnetic slab with finite thickness and finite width. Taking into account the dipolar, the exchange and the uniaxial anisotropic crystalline field interactions,…

A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after…

Electrically manipulating domain wall (DW) is at central in the field of spintronics. Magnetic Weyl semimetal (WSM) offers an additional knob for electric manipulation of DW by utilizing the topological DW bound states. Using magnetic WSM…

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…

We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected…

The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports…

We explore a new type of domain wall structure in ultrathin films with perpendicular anisotropy, that is influenced by the Dzyaloshinskii-Moriya interaction due to the adjacent layers. This study is performed by numerical and analytical…

Electric control of multiple domain walls (DWs) motion is demonstrated by Pt/Co/Pt nanotracks with perpendicular magnetic anisotropy. Due to the weak microstructural disorders with small DW propagation field, the purely current-driven DW…

Stabilization of unusual spin-orbit driven magnetic orderings are achieved for chains of Mn atoms deposited on a W(110) substrate. First-principles electronic structure calculations show that the ground state spin configuration is…

Non-collinear antiferromagnets exhibits richer magneto-transport properties due to the topologically nontrivial spin structure they possess compared to conventional nonmagnetic materials, which allows us to manipulate the charge-spin…

Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a…

We use spherical neutron polarimetry to determine the ground state magnetic structure of Mn3Sn. We find that Mn3Sn adopts an inverse triangular structure with spins parallel to <100> (Type III) rather than spins parallel to <110> (Type IV).…