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Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…

Black phosphorus is not stable when it is exposed to air. When covered or terminated by single layer carbon atoms, such as graphene carbon nanotube, it is more strongly protected in the rapid degradation than the bare black phosphorus.…

Materials Science · Physics 2017-05-24 Kun Cai , Jing Wan , Likui Yang , Ning Wei

We present a first-principles study of semiconducting carbon nanotubes adsorbed on the unpassivated Si(100) surface. We have found metallicity for the combined system caused by n-doping of the silicon slab representing the surface by the…

Materials Science · Physics 2007-05-23 Salvador Barraza-Lopez , Peter M. Albrecht , Nichols A. Romero , Karl Hess

Theory predicts peculiar features for excited-state dynamics in one dimension (1D) that are difficult to be observed experimentally. Single-walled carbon nanotubes (SWNTs) are an excellent approximation to 1D quantum confinement, due to…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Giancarlo Soavi , Francesco Scotognella , Daniele Viola , Timo Hefner , Tobias Hertel , Giulio Cerullo , Guglielmo Lanzani

Scandium nitride (ScN) is a semiconducting transition metal nitride for which there are not identified dopants. We present local density functional calculations, in supercell approach, for ScN doped with O and C in N-sites and Ca and Ti in…

Materials Science · Physics 2009-09-29 G. Soto , M. G. Moreno-Armenta , A. Reyes-Serrato

We investigate a disordered single-walled carbon nanotube (SWCNT) in an effective medium super cell approximation (EMSCA). First type of disorder that we consider is the presence of vacancies. Our results show that the vacancies induce some…

Mesoscale and Nanoscale Physics · Physics 2016-08-31 Rostam Moradian

In this work, tin oxide (SnO2)/multi-walled carbon nanotube (MWCNT) composite based ethanol sensor that exhibits fast response/recovery behaviour, large sensitivity, and good selectivity was demonstrated. First, Pd doped SnO2 (SnO2-Pd)…

Applied Physics · Physics 2019-06-10 Cihat Tasaltin

The exceptional charge transport properties of single-walled carbon nanotubes (SWCNTs) enable numerous ultrafast optoelectronic applications. Modifying SWCNTs by introducing defects significantly impacts the performance of nanotube-based…

Ce3+ doped SrS phosphors with a charge-compensating Na+ for light-emitting diode (LED) applications have been successfully synthesized via a solid-state reaction method, which can be indexed to rock-salt-like crystal structures of Fm-3m…

Materials Science · Physics 2021-11-24 Shuqin Chang , Jipeng Fu , Xuan Sun , Guangcan Bai , Guoquan Liu , Kaina Wang , Ligang Xu , Qi Wei , Thomas Meier , Mingxue Tang

We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance…

Mesoscale and Nanoscale Physics · Physics 2008-01-09 Troels Markussen , Riccardo Rurali , Antti-Pekka Jauho , Mads Brandbyge

As narrow optical bandgap materials, semiconducting single-walled carbon nanotubes (SWCNTs) are rarely regarded as charge donors in photoinduced charge-transfer (PCT) reactions. However, the unique band structure and unusual exciton…

We demonstrate assembly of solution processed semiconducting enriched (99%) single walled carbon nanotubes (s-SWNT) in an array with varying linear density via ac-dielectrophoresis and investigate detailed electronic transport properties of…

Mesoscale and Nanoscale Physics · Physics 2011-05-05 Biddut K. Sarker , Shashank Shekhar , Saiful I. Khondaker

We report optically induced aggregation and consequent separation of specific diameter of pristine single walled carbon nanotubes (SWNT) from stable solution. Well dispersed solution of pristine SWNTs, without any surfactant or…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Madhusudana Gopannagari , Harsh Chaturvedi

Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…

Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance…

Materials Science · Physics 2022-12-22 Michael Seifert , Miguel A. L. Marques , Silvana Botti

Single-walled carbon nanotubes (SWCNTs) are quasi-one-dimensional systems with poor Coulomb screening and enhanced electron-phonon interaction, and are good candidates for excitons and exciton-phonon couplings in metallic state. Here we…

Materials Science · Physics 2009-04-20 Hualing Zeng , Hongbo Zhao , Fu-Chun Zhang , Xiaodong Cui

Carbon nanotube (CNT) wires approach copper's specific conductivity and surpass carbon fiber's strength, with further improvement anticipated with greater aspect ratios and incorporation of dopants with long-range structural order.…

The optoelectronic properties of single- and double-wall carbon nanotubes (CNTs) noncovalently functionalized with tetraphenylporphyrins (TPPs) are addressed by dispersion-corrected ab initio calculations. Five CNT species with different…

Materials Science · Physics 2017-01-04 Walter Orellana

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 I. Kuljanishvili , C. Kayis , J. F. Harrison , C. Piermarocchi , T. A. Kaplan , S. H. Tessmer , L. N. Pfeiffer , K. W. West

Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding…

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