Related papers: Coupled spin and valley Hall effects driven by coh…
In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone,…
We study transmission in a system consisting of a curved graphene surface as an arc (ripple) of circle connected to two flat graphene sheets on the left and right sides. We introduce a mass term in the curved part and study the effect of a…
The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley…
Nonlinear transport plays a vital role in probing the quantum geometry of Bloch electrons, valley chirality, and carrier scattering mechanisms. The nonlinear Hall effect, characterized by a nonlinear scaling of Hall voltage with…
We investigate the Goos-H\"anchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene…
We present a methodology to address, from first principles, charge-spin interconversion in two-dimensional materials with spin-orbit coupling. Our study relies on an implementation of density functional theory based quantum transport…
We calculate the rates of phonon-assisted hyperfine spin flips during electron and hole tunneling between quantum dots in a self-assembled quantum dot molecule. We show that the hyperfine process dominates over the spin-orbit-induced spin…
Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67.…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Circuit theory has been tremendously successful in translating physical equations into circuit elements in organized form for further analysis and proposing creative designs for applications. With the advent of new materials and phenomena…
We predict a new effect in electronic bilayers: the {\it Spin Hall Drag}. The effect consists in the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
We present a rigorous microscopic theory of the extrinsic spin Hall effect in disordered graphene based on a nonperturbative quantum diagrammatic treatment incorporating skew scattering and anomalous---impurity…
We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction.…
The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which…
We study the dynamics of semiclassical electrons in (gapped) graphene in two complementary limits, i.e. in the Klein tunneling and valley Hall effect regimes, by scattering wave packets off armchair step potentials and by exposing wave…
We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through…
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical…