Related papers: Hopping Transfer Optimizes Avalanche Multiplicatio…
Layered two-dimensional (2D) materials exhibit unique properties, expanding opportunities in material design. We investigate MX$_2$ transition metal dichalcogenides (TMDCs) (M = Mo, W; X = S, Se, Te) in homo- and heterobilayers with…
Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of…
Advanced materials for electrocatalytic and photoelectrochemical water splitting are central to the area of renewable energy. Here, we developed a solvothermal synthesis of MoS2 nanoparticles selectively on reduced graphene oxide (RGO)…
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atoms is typically required to tune the conductivity to p-type…
We report on fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited…
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…
The vapor phase synthesis of two-dimensional transition-metal dichalcogenides (MX2) and their heterostructures is often poorly reproducible and sensitive to uncontrolled environmental humidity. It was recently realized that water vapor can…
Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier…
Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal…
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium…
Heat dissipation is a very critical problem for designing nano-functional devices, including MoS2/Graphene heterojunctions. In this paper we investigate thermal transport in MoS2/Graphene hybrid nanosheets under various heating conditions,…
Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were…
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2,…
We present an analytical investigation of the optical absorption spectrum of monolayer molybdenumdisulfide. Based on the density matrix formalism, our approach gives insights into the microscopic origin of excitonic transitions, their…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
In this article, a novel hot wire oxidation-sublimation deposition (HWOSD) technique was developed to prepare molybdenum oxide (MoOx) thin films with high quality. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a hole…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a…
Recently, 2D JTMDs with asymmetric electronic structures are inviting an intense research interest in modern science and technology. Using the first principles-based periodic hybrid dispersion-corrected Density Functional Theory (DFT-D)…
The transient high-frequency noise response of two-dimensional MoS2 under abrupt large signal switching field conditions is studied by means of an ensemble Monte Carlo simulator. Low-to-high and high-to-low transitions are analyzed at low…