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Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is therefore crucial for…
We formulate a model for a point defect embedded in a homogeneous multilattice crystal with an empirical interatomic potential interaction. Under a natural, phonon stability assumption we quantify the decay of the long-range elastic fields…
Hydrogen plays critical roles in materials science, particularly for advancing technologies in hydrogen storage and phase manipulation, while also posing challenges like hydrogen embrittlement. Understanding its behavior, vital for…
Electron channeling contrast imaging (ECCI) is a scanning electron microscopy (SEM) based technique that enables bulk-sample characterization of crystallographic defects (e.g. dislocations, stacking faults, low angle boundaries). Despite…
This study investigates the convergence properties of a collection of iterative electron ptychography methods, under low electron doses ($<$ 10$^3$ $e^-/A^2$) and gives particular attention to the impact of the user-defined update…
Atomic-resolution imaging with scanning transmission electron microscopy is a powerful tool for characterizing the nanoscale structure of materials, in particular features such as defects, local strains, and symmetry-breaking distortions.…
Detecting and analyzing various defect types in semiconductor materials is an important prerequisite for understanding the underlying mechanisms as well as tailoring the production processes. Analysis of microscopy images that reveal…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ SixGe1-x -- a…
In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to…
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…
Silicon dioxide is a suitable material to encapsulate proteins at room temperature so that they can be analysed at the atomic level using laser-assisted atom probe tomography (La-APT). To achieve this goal, in this study we show that UV and…
Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable…
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and…
We report on ultrasonic imaging in a random heterogeneous medium. The goal is to detect flaws embedded deeply into a polycrystalline material. A 64-element array of piezoelectric transmitters/receivers at a central frequency of 5 MHz is…
Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties. Characterizing the…
It has been a widely growing interest in using silicon carbide (SiC)in high-power electronic devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and make the device fall into unexpected failures. To…
There is a clear need for developments in characterisation techniques that provide detailed information about structure-function relationships in biology. Using electron microscopy to achieve high resolution while maintaining a broad field…
The end of the 19th century brought about a change in the dynamics of computing by the development of the microprocessor. Huge bedroom size computers began being replaced by portable, smaller sized desktops. Today the world is dominated by…
The purpose of this project is to investigate the use of charge couple devices (CCDs) to detect electrons directly. This can be done in transmission electron microscopy (TEM) for electrons over 100 KeV, but for space plasma instruments,…
The missing phase problem in X-ray crystallography is commonly solved using the technique of molecular replacement, which borrows phases from a previously solved homologous structure, and appends them to the measured Fourier magnitudes of…