Related papers: Sensitivity of Multislice Electron Ptychography to…
The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two…
Solving crystal structures from kinematical X-ray or electron diffraction patterns of single crystals requires many more diffracted beams to be recorded than there are atoms in the structure, since the phases of the structure factors can…
Diffraction patterns of electrons are believed to resemble those of electromagnetic waves (EMW). I performed a series of experiments invoked to show that the periodicity of peaks in the diffraction diagram of electrons is concerned with the…
Although defocus can be used to generate partial phase contrast in transmission electron microscope images, cryo-electron microscopy (cryo-EM) can be further improved by the development of phase plates which increase contrast by applying a…
When a sample is exposed using electron-beam lithography, the electrons scatter deep and far in the substrate, resulting in unwanted deposition of dose at both the nano- and the microscale. This proximity effect can be mitigated by…
The intricate fine structure of Kikuchi diffraction plays a vital role in probing phase transformations and strain distributions in functional materials, particularly in electron microscopy. Beyond these applications, it also proves…
There exist two groups of electron microscopy methods that are capable of providing three-dimensional (3D) structural information of an object, i.e., electron tomography and depth sectioning. Electron tomography is capable of resolving…
A new tool providing material contrast control in scanning electron microscopy (SEM) is demonstrated. The approach is based on deep-UV illumination during SEM imaging and delivers a novel material based contrast as well as higher resolution…
A deep understanding of defects is essential for the optimisation of materials for solar energy conversion. This is particularly true for metal oxide photo(electro)catalysts, which typically feature high concentrations of charged point…
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the…
Describing the deviation of a real structure from a hypothetical higher-symmetry ideal can be a powerful tool to understand and interpret phase transitions. Here we introduce a simple yet effective metric that quantifies the degree of unit…
In materials science and particularly electron microscopy, Electron Back-scatter Diffraction (EBSD) is a common and powerful mapping technique for collecting local crystallographic data at the sub-micron scale. The quality of the…
To date, high-resolution electron microscopy has largely relied on using the phase of the exit wave function at the exit surface to form a high-resolution electron microscopic image. We have for the first time used chromatic aberration…
The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The…
In this work, we present and investigate the novel blind inverse problem of position-blind ptychography, i.e., ptychographic phase retrieval without any knowledge of scan positions, which then must be recovered jointly with the image. The…
Transmission electron microscopy, scanning transmission electron tomography, and electron energy loss spectroscopy were used to characterize three-dimensional artificial Si nanostructures called "metalattices", focusing on Si metalattices…
We report on image processing techniques and experimental procedures to determine the lattice-site positions of single atoms in an optical lattice with high reliability, even for limited acquisition time or optical resolution. Determining…
For quantitative electron microscopy high precision position information is necessary so that besides an adequate resolution and sufficiently strong contrast of atoms, small width of peaks which represent atoms in structural images is…
Directly imaging all atoms constituting a material and, maybe more importantly, crystalline defects that dictate materials' properties, remains a formidable challenge. Here, we propose a new approach to chemistry-sensitive field-ion…
Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits…