Related papers: Gate-tunable negative differential resistance in m…
Recent reports on machine learning (ML) and machine vision (MV) devices have demonstrated the potentials of 2D materials and devices. Yet, scalable 2D devices are being challenged by contact resistance and Fermi Level Pinning (FLP), power…
Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in…
The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have…
The field of 2D magnetic materials has paved the way for the development of spintronics and nanodevices with new functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has…
The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations per unit energy. In this paper, we propose a new device…
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical…
Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our…
Down-scaling device dimensions to the nanometer range raises significant challenges to traditional device design, due to potential current leakage across nanoscale dimensions and the need to maintain reproducibility while dealing with…
We have performed device-based tunnelling spectroscopy of NbSe$_2$ in the vortex state with a magnetic field applied both parallel and perpendicular to the $a-b$ plane. Our devices consist of layered semiconductors placed on top of…
We report on the experimental demonstration of atomically thin molybdenum disulfide (MoS2)-graphene van der Waals (vdW) heterostructure nanoelectromechanical resonators with ultrawide frequency tuning. With direct electrostatic gate tuning,…
We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7…
We have studied the optical conductivity of two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDC) using ab-initio density functional theory (DFT). We find that this class of materials presents large optical response…
We theoretically demonstrate a gate-tunable superconducting spin valve effect (SVE) in a van der Waals (vdW) heterostructure composed of a monolayer superconductor (S) sandwiched between two ferromagnetic (F) monolayers (F/S/F). By…
Two-dimensional (2D) van der Waals (vdW) magnets with layer-dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in…
The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer…
Van der Waals magnets have emerged as a fertile ground for the exploration of highly tunable spin physics and spin-related technology. Two-dimensional (2D) magnons in van der Waals magnets are collective excitation of spins under strong…
Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is…
Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72,…