Related papers: Chalcogenide Metasurfaces Enabling Ultra-Wideband …
High-index dielectric materials are in great demand for nanophotonic devices and applications, from ultrathin optical elements to metal-free sub-diffraction light confinement and waveguiding. Here we show that chalcogenide topological…
In nanophotonics, small mode volumes, high-quality factor (Q) resonances, and large field enhancements without metals, fundamentally scale with the refractive index and are key for many implementations involving light-matter interactions.…
Chalcogenide material-based integrated photonic devices have garnered widespread attention due to their unique wideband transparency. Despite their recognized CMOS compatibility, the fabrication of these devices relies predominantly on…
In this work, we demonstrate the performance of a silicon-compatible high-performance self-powered photodetector.A wide detection range from visible (405 nm) to near-infrared (1550 nm) light was enabled by the vertical p-n heterojunction…
Mid-wave infrared (IR) and long-wave IR spectral ranges are of growing interest in various applications such as thermal imaging, thermography-based remote sensing, and night vision. Materials widely used for IR photodetectors in this regime…
The development of nanoplasmonic devices, such as plasmonic circuits and metamaterial superlenses in the visible to ultraviolet frequency range, is hampered by the lack of low-loss plasmonic media. Recently, strong plasmonic response was…
All-dielectric metasurfaces provide unique solutions for advanced wavefront manipulation of light with complete control of amplitude and phase at sub-wavelength scales. One limitation, however, for most of these devices is the lack of any…
Two-dimensional molybdenum disulfide (MoS$_2$) featuring atomically thin thickness and unique electronic structure with favorable bandgap has been widely recognized as an attractive new material for the development of the next generation of…
The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths in both crystalline and amorphous phases. Here, we…
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operation. Released GeSn membranes provide an additional degree of…
Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability, complex manufacturing process and high costs still…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Photodetectors are typically based on photocurrent generation from electron-hole pairs in semiconductor structures and on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic…
Topological insulators generally have dielectric bulk and conductive surface states. Consequently, some of these materials have been shown to support polaritonic modes at visible and THz frequencies. At the same time, the optical properties…
Chalcogenide glasses are exceptional materials that show a wide contrast in optical properties upon phase change and are highly researched for reconfigurable electronic and nanophotonic devices. Here, we report the first proof-of-concept…
Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here we address the problem of scalably integrating…
While recent advances in reconfigurable photonics have provided new avenues for manipulating light on the subwavelength scale, on-demand control of infrared absorption remains elusive. Here, we experimentally demonstrate a plasmonic…
Due to miniaturization of device dimensions, the next generations photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic…
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using…
The application of ultrathin two-dimensional (2D) perovskites in near-infrared and visible-range optoelectronics has been limited owing to their inherent wide bandgaps, large excitonic binding energies and low optical absorption at higher…