High-index and low-loss topological insulators for mid-infrared nanophotonics
Abstract
Topological insulators generally have dielectric bulk and conductive surface states. Consequently, some of these materials have been shown to support polaritonic modes at visible and THz frequencies. At the same time, the optical properties of topological insulators in the mid-infrared (IR) remain poorly investigated. We employ near-field imaging to probe the mid-IR response from the exfoliated flakes of bismuth (Bi) / selenide (Se) / telluride (Te) / antimony (Sb) crystals with varying stoichiometry - Bi2Se3, Bi2Te2Se, and Bi1.5Sb0.5Te1.7Se1.3 - in pristine form as well as covered by thin flakes of hexagonal boron nitride (hBN). Contrary to theoretical expectations, all three materials exhibit a dielectric response with a high refractive index and with a loss below the experimental detection limit. Particularly, the near-field mapping of propagating phonon-polaritons in hBN demonstrates that these van der Waals crystals act as a practically lossless dielectric substrate with an ultra-high refractive index of up to 7.5 in Bi2Te2Se. Such a unique dielectric crystal would be of great advantage for numerous nanophotonic applications in the mid-IR.
Keywords
Cite
@article{arxiv.2311.02841,
title = {High-index and low-loss topological insulators for mid-infrared nanophotonics},
author = {Sergey G. Menabde and Jacob T. Heiden and Vladimir A. Zenin and N. Asger Mortensen and Min Seok Jang},
journal= {arXiv preprint arXiv:2311.02841},
year = {2024}
}