A robust weak topological insulator in a bismuth halide Bi4Br2I2

Ryo Noguchi; Masaru Kobayashi; Kaishu Kawaguchi; Chun Lin; Hiroaki Tanaka; Kenta Kuroda; Ayumi Harasawa; Viktor Kandyba; Mattia Cattelan; Alexei Barinov; Makoto Hashimoto; Donghui Lu; Takao Sasagawa; Takeshi Kondo

doi:10.1103/PhysRevLett.133.086602

A robust weak topological insulator in a bismuth halide Bi4Br2I2

Materials Science 2024-09-27 v1

Authors: Ryo Noguchi , Masaru Kobayashi , Kaishu Kawaguchi , Chun Lin , Hiroaki Tanaka , Kenta Kuroda , Ayumi Harasawa , Viktor Kandyba , Mattia Cattelan , Alexei Barinov , Makoto Hashimoto , Donghui Lu , Takao Sasagawa , Takeshi Kondo

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Abstract

We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van-der-Waals stacking of 2D topological insulator layers, and find a bismuth halide Bi4Br2I2 to be an ideal weak topological insulator (WTI) with the largest band gap (~230 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.

Keywords

topological insulators van der waals heterostructures electronic structure of materials

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@article{arxiv.2301.07158,
  title  = {A robust weak topological insulator in a bismuth halide Bi4Br2I2},
  author = {Ryo Noguchi and Masaru Kobayashi and Kaishu Kawaguchi and Chun Lin and Hiroaki Tanaka and Kenta Kuroda and Ayumi Harasawa and Viktor Kandyba and Mattia Cattelan and Alexei Barinov and Makoto Hashimoto and Donghui Lu and Takao Sasagawa and Takeshi Kondo},
  journal= {arXiv preprint arXiv:2301.07158},
  year   = {2024}
}

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7 pages, 4 figures

A robust weak topological insulator in a bismuth halide Bi4Br2I2

Abstract

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