Related papers: Simplified EPFL GaN HEMT Model
We present a new approach for learning unsupervised node representations in community graphs. We significantly extend the Interferometric Graph Transform (IGT) to community labeling: this non-linear operator iteratively extracts features…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
The absence of a band-gap in graphene limits the gate modulation of its electron conductivity, both in regular graphene as well as in PN junctions, where electrostatic barriers prove transparent to Klein tunneling. We demonstrate a novel…
Integrated data and energy transfer (IDET) is considered as a key enabler of 6G, as it can provide both wireless energy transfer (WET) and wireless data transfer (WDT) services towards low power devices. Thanks to the extra degree of…
Recent years have witnessed the emerging success of graph neural networks (GNNs) for modeling structured data. However, most GNNs are designed for homogeneous graphs, in which all nodes and edges belong to the same types, making them…
Transformer-based models have achieved remarkable success, but their core components, Transformer layers, are largely heuristics-driven and engineered from the bottom up, calling for a prototypical model with high interpretability and…
This study introduces a novel transformer model optimized for large-scale point cloud processing in scientific domains such as high-energy physics (HEP) and astrophysics. Addressing the limitations of graph neural networks and standard…
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in…
Transformer models are permutation equivariant. To supply the order and type information of the input tokens, position and segment embeddings are usually added to the input. Recent works proposed variations of positional encodings with…
Climate science employs a hierarchy of models, trading the tractability of simplified energy balance models (EBMs) against the detail of Global Circulation Models. Since the pioneering work of Hasselmann, stochastic EBMs have allowed…
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 microns. Breakdown voltage reached >3 kV (tool limit) before…
Metamaterial analogues of electromagnetically induced transparency (EIT) have been intensively studied and widely employed for slow light and enhanced nonlinear effects. In particular, the active modulation of the EIT analogue and…
In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…
Extended from its electromagnetic counterpart, transformation thermodynamics applied to thermal conduction equations can map a virtual geometry into a physical thermal medium, realizing the manipulation of heat flux with almost arbitrarily…
Attention-based models, exemplified by the Transformer, can effectively model long range dependency, but suffer from the quadratic complexity of self-attention operation, making them difficult to be adopted for high-resolution image…
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at…
An atomistic model based on the spin-restricted extended Huckel theory (EHT) is presented for simulating electronic structure and I-V characteristics of graphene devices. The model is applied to zigzag and armchair graphene nano-ribbons…
We introduce EELBERT, an approach for compression of transformer-based models (e.g., BERT), with minimal impact on the accuracy of downstream tasks. This is achieved by replacing the input embedding layer of the model with dynamic, i.e.…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
A heterojunction tunneling field effect transistor based on armchair graphene nanoribbons is proposed and studied using ballistic quantum transport simulation based on 3D real space nonequilibrium Green's function formalism. By using low…