Related papers: Saturable absorption in highly excited silicon and…
Electron stimulated desorption of cyclopentene from the Si(100)-2x1 surface is studied experimentally with cryogenic UHV STM and theoretically with transport, electronic structure, and dynamical calculations. Unexpectedly for a saturated…
The absorption of a single photon that excites a quantum system from a low to a high energy level is an elementary process of light-matter interaction, and a route towards realizing pure single-photon absorption has both fundamental and…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…
The model of hydrogen migration and of the reactions of hydrogen atoms with electrically active impurity, developed earlier, has been applied to simulate hydrogen diffusion and passivation process during plasma deuteration of silicon…
We present a theoretical investigation of the yet unexplored ultrafast processes and dynamics of the produced excited carriers upon irradiation of Silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The…
In this paper, we report on the optical absorption in porous silicon. We model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the…
We investigate photoinization, energy deposition, plasma formation and the ultrafast optical breakdown in crystalline silicon irradiated by intense near-infrared laser pulses with pulse duration $\tau \le $ 100 fs. The occurrence of…
Ultrafast light-matter interaction is a powerful tool for the study of solids. Upon laser excitation, carrier multiplication and lattice acceleration beyond thermal velocity can occur, as a result of far-from-equilibrium carrier relaxation.…
Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account…
Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have…
Optical limiting (OL), a crucial mechanism for protecting human eyes and sensitive sensors from intense radiation, relies on understanding the optical nonlinearities acting on the systems. Assessing and disentangling the effects at play is…
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…
We present an experimental and theoretical study of modal nonlinear dynamics in a specially designed dual-mode semiconductor Fabry-Perot laser with a saturable absorber. At zero bias applied to the absorber section, we have found that with…
Photophoretic force due to the optically-induced thermal effect provides an effective way to manipulate the light-absorbing particles suspended in ambient gases. However, how this force temporally responds to the intensity modulation of the…
The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the…
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…
We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and…
We calculate the electron excitation in cubic silicon carbide (3C-SiC) caused by the intense femtosecond laser double pulses using time-dependent density functional theory (TDDFT). We assume the electron distributions in the valence band…
We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi$_{0.3}$Sb$_{0.7}$)$_2$(Te$_{0.1}$Se$_{0.9}$)$_3$ 3D topological…
We calculate the dielectric response of excited crystalline silicon in electron thermal equilibrium by adiabatic time-dependent density functional theory (TDDFT) to model the response to irradiation by high-intensity laser pulses. The real…