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The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…

Confined microexplosions induced in silicon by powerful ultrashort laser pulses can lead to new Si phases. Some of these have not previously been observed via near-equilibrium compression of silicon. In this study, confocal Raman…

Materials Science · Physics 2020-10-07 L. A. Smillie , M. Niihori , L. Rapp , B. Haberl , J. S. Williams , J. E. Bradby , C. J. Pickard , A. V. Rode

We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. J. Ferguson , V. C. Chan , A. R. Hamilton , R. G. Clark

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and…

Instrumentation and Detectors · Physics 2015-06-11 Jiaguo Zhang , Eckhart Fretwurst , Robert Klanner , Ioana Pintilie , Joern Schwandt , Monica Turcato

Semiconductor nanocrystal emission polarization is a crucial probe of nanocrystal physics and an essential factor for nanocrystal-based technologies. While the transition dipole moment of the lowest excited state to ground state transition…

Mesoscale and Nanoscale Physics · Physics 2023-07-19 Daniel Amgar , Gur Lubin , Gaoling Yang , Freddy T. Rabouw , Dan Oron

This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…

Applied Physics · Physics 2023-01-31 Nicolas Roisin , Marie-Stéphane Colla , Jean-Pierre Raskin , Denis Flandre

On the basis of detailed first-principles calculations the anisotropic thermoelectric transport properties of biaxially strained silicon were studied with focus on a possible enhancement of the powerfactor. Electron as well as hole doping…

Materials Science · Physics 2011-10-18 Nicki F. Hinsche , Ingrid Mertig , Peter Zahn

Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic…

We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave…

Mesoscale and Nanoscale Physics · Physics 2011-05-24 Worasom Kundhikanjana , Keji Lai , Michael A. Kelly , Zhi-Xun Shen

We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$…

We predict that electron-doped silicene is a good two-dimensional electron-phonon superconductor under biaxial tensile strain by first-principles calculations within rigid band approximation. Superconductivity transition temperature of…

Superconductivity · Physics 2013-11-27 Wenhui Wan , Yanfeng Ge , Fan Yang , Yugui Yao

We characterize the phase memory time of phosphorus donor electron spins in lightly-doped natural silicon at high magnetic field (8.58 T) in the dark and under low-power optical excitation. The spin echo decays are dominated by spectral…

Quantum Physics · Physics 2021-07-15 Lihuang Zhu , Johan van Tol , Chandrasekhar Ramanathan

The ab initio prediction of Raman intensities for bulk solids usually relies on the hypothesis that the frequency of the incident laser light is much smaller than the band gap. However, when the photon frequency is a sizeable fraction of…

Materials Science · Physics 2015-06-17 Yannick Gillet , Matteo Giantomassi , Xavier Gonze

The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in…

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear…

Materials Science · Physics 2010-11-16 Eisuke Abe , Akira Fujimoto , Junichi Isoya , Satoshi Yamasaki , Kohei M. Itoh

We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation…

This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in…

We develop and thoroughly test a stress-controlled, parallel plates shear cell that can be coupled to an optical microscope or a small angle light scattering setup, for simultaneous investigation of the rheological properties and the…

Soft Condensed Matter · Physics 2017-01-04 S. Aime , L. Ramos , J. -M. Fromental , G. Prévot , R. Jelinek , L. Cipelletti

Excitons -- elementary excitations formed by bound electron-hole pairs -- govern the optical properties and excited-state dynamics of materials. In two-dimensions (2D), excitons are theoretically predicted to have a linear energy-momentum…

Materials Science · Physics 2025-03-14 Luna Y. Liu , Steffi Y. Woo , Jinyuan Wu , Bowen Hou , Cong Su , Diana Y. Qiu

We investigate the dynamics of the exciton formation and relaxation on a picosecond time scale following a pulsed photoexcitation of a semiconductor. The study is conducted in the framework of the density matrix theory complemented with the…

Mesoscale and Nanoscale Physics · Physics 2015-12-25 Veljko Janković , Nenad Vukmirović
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