Related papers: Reconfigurable Spin Logics and High-density Multis…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons and binarized synapses for a single-cycle analog in-memory computing (IMC) architecture. First, an analog…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…
Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise…
An applied electric current through a space-inversion asymmetric magnet induces spin-orbit torques (SOTs) on the magnetic moments, which holds much promise for future memory devices. We discuss general Green's function expressions suitable…
We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Magnetization switching by current-induced spin-orbit torques (SOTs) is of great interest due to its potential applications for ultralow-power memory and logic devices. In order to be of technological interest, SOT effects need to switch…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the…
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration,…
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator…