Related papers: Efficient spin to charge conversion and spin memor…
Altermagnets, which exhibit the advantages of both antiferromagnets and ferromagnets, have attracted significant attention recently. Among them, ruthenium dioxide (RuO2), a prototypical altermagnet candidate, is under intensive debate on…
Using the THz emission spectroscopy, we investigate ultrafast spin-to-charge current conversion in epitaxial thin films of the altermagnetic candidate RuO$_2$. We perform a quantitative analysis of competing effects that can contribute to…
We studied the spin-to-charge and charge-to-spin conversion at room temperature in sputtered WTe2-x (x=0.8)(t)/Co20Fe60B20(6 nm) heterostructures. Spin pumping measurements were used to characterize the spin-to-charge efficiency and the…
Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators,…
Magnetization switching using spin-orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by…
The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while…
Altermagnets host spin-split electronic bands without net magnetization, enabling spin-polarized transport in the absence of conventional ferromagnetism. RuO$_2$ has been proposed as a candidate altermagnet, yet experimental reports remain…
The spin Hall effect originating from 5d heavy transition metal thin films such as Pt, Ta, and W is able to generate efficient spin-orbit torques that can switch adjacent magnetic layers. This mechanism can serve as an alternative to…
Efficient spin/charge interconversion is desired to develop innovative spin-based devices. So far, the interconversion has been performed by using heavy atomic elements, strong spin-orbit interaction of which realizes the interconversion…
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin…
Spin-orbit torque efficiency is conventionally fixed by bulk materials. $D$-wave altermagnets introduce an additional nonrelativistic spin-charge conversion channel beyond inverse spin-Hall effect. Using prototypical candidate RuO$_2$ as an…
We report on a systematic comparative study of the spin Hall efficiency between highly face-centered cubic (fcc)-textured Pt-Al alloy films grown on MgO(001) and poorly-crystallized Pt-Al alloy films grown on SiO$_2$. Using CoFeB as the…
Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient…
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an…
The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have…
The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular…
The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an…
Topological materials with large spin-orbit coupling and immunity to disorder-induced symmetry breaking show great promise for efficiently converting charge to spin. Here, we report that long-range disordered sputtered WTex thin films…
Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficiency of spin-orbit torque technologies. Here we report that…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…