Related papers: Spin Relaxation and Diffusion in Monolayer 1T'-WTe…
The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…
Longitudinal relaxation is the process by which an excited spin ensemble decays into its thermal equilibrium with the environment. In solid-state spin systems relaxation into the phonon bath usually dominates over the coupling to the…
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…
We report an enhancement of the electron spin relaxation time (T1) in a (110) InAs/GaSb superlattice by more than an order of magnitude (25 times) relative to the corresponding (001) structure. The spin dynamics were measured using…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
We introduce a computational framework for first-principles density matrix transport within the Wigner function formalism to predict transport of quantum-mechanical degrees of freedom such as spin over long time and length scales. This…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
We present a combined theory-experiment study to quantify spin diffusion in the square lattice quantum spin-1/2 XY model at finite temperature. On the theory side, we leverage a recently developed dynamical high-temperature expansion method…
In this work, the spin relaxation accompanying the spin diffusion in symmetric Si/SiGe quantum wells without the D'yakonov-Perel' spin-relaxation mechanism is calculated from a fully microscopic approach. The spin relaxation is caused by…
The existence of a quantum spin liquid (QSL) in which quantum fluctuations of spins are sufficiently strong to preclude spin ordering down to zero temperature was originally proposed theoretically more than 40 years ago, but its…
Two-dimensional transition metal dichalcogenides (TMDs) of Mo and W in their 1T' crystalline phase host the quantum spin Hall (QSH) insulator phase. We address the electronic properties of the QSH edge states by means of first-principles…
Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic…
We derive the spontaneous and thermal spin-flip rates for a neutral two-level ultra-cold atom that is coupled to a magnetic field. We apply this theory to an atom in the vicinity of a 2-layer cylindrical absorbing dielectric body surrounded…
Spin transistors based on a semiconducting channel attached to ferromagnetic electrodes suffer from fast spin decay and extremely low spin injection/detection efficiencies. Here, we propose an alternative all-in-one spin device whose…
We discuss the long-time relaxation of a qubit linearly coupled to a finite bath of $N$ spins (two-level systems, TLSs), with the interaction Hamiltonian in rotating wave approximation. We focus on the regime $N\gg 1$, assuming that the…
We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenides in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the…
The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very…
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…
Mott insulators with localized magnetic moments will exhibit a quantum spin liquid (QSL) state when the quantum fluctuations are strong enough to suppress the ordering of the spins. Such an entangled state will give rise to collective…