Related papers: Electrically-driven control of nanoscale chemical …
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium…
There is a growing interest in the development of functional metal oxides with mixed ionic electronic conduction for their application in different strategic fields. In particular, ionic transport-related phenomena are of primary importance…
The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated oxides offers an energy-efficient solution. By designing…
The ability to control the magnetization switching in nanoscale devices is a crucial step for the development of fast and reliable techniques to store and process information. Here we show that the switching dynamics can be controlled…
Memristors have demonstrated immense potential as building blocks in future adaptive neuromorphic architectures. Recently, there has been focus on emulating specific synaptic functions of the mammalian nervous system by either tailoring the…
While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, we explore an alternative route based on a new class of spiking oscillators we call thermal…
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision)…
Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…
We report a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction struc- tures which have alternative metastable…
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…
Nanofluidic memristors have demonstrated great potential for neuromorphic system applications with the advantages of low energy consumption and excellent biocompatibility. Here, an effective way is developed to regulate the memristive…
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance…
Reconfigurable oxide nanoelectronics, enabled by conductive atomic force microscope (cAFM) lithography, have established complex oxide interfaces as a promising platform for quantum engineering that harnesses emergent phenomena for advanced…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
An analog computer makes use of continuously changeable quantities of a system, such as its electrical, mechanical, or hydraulic properties, to solve a given problem. While these devices are usually computationally more powerful than their…