Related papers: Strained topological insulator spin-orbit torque r…
We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of…
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
Using spin-assisted ab-initio random structure searches, we explore an exhaustive quantum phase diagram of archetypal interfaced Mott insulators, i.e. lanthanum-iron and lanthanum-titanium oxides. In particular, we report that the charge…
We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and…
Non-volatile Neuromorphic Computing (NC) elements utilizing Spin Orbit Torque (SOT) provide a viable solution to alleviate the memory wall bottleneck in contemporary computing systems. However, the two challenges, low SOT efficiency and the…
Short-term plasticity (STP) is fundamental to temporal information processing in biological neural systems but remains difficult to realize efficiently in neuromorphic hardware. Memristive electrochemical random-access memory (ECRAM)…
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching.…
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…
In this work, we propose FUSE, a novel GPU cache system that integrates spin-transfer torque magnetic random-access memory (STT-MRAM) into the on-chip L1D cache. FUSE can minimize the number of outgoing memory accesses over the…
Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…
This work presents theoretical demonstration of a carrier trap unit formed by dual topological insulator constrictions (TIC) on the HgTe/CdTe quantum well (QW) with inverted band structures. The sample of HgTe/CdTe QW is patterned into a…
A family of ferrimagnets (CoV2O4, GdCo, TbCo) exhibits out-of-plane magnetic anisotropy when strained compressively and in-plane magnetic anisotropy when strained expansively (or vice versa). If such a ferrimagnetic thin film is placed on…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the…
We investigate spin transport in two dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In presence of an in plane magnetization AFTI supports zero energy modes, which enables topologically protected edge…
One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…
While current-induced bistate spin-orbit torque (SOT) switching has been well established, deterministic electrical control of multiple magnetic states remains a central challenge in spintronics. Here, we realize a conceptually new…
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…