Related papers: Giant strain-induced spin splitting effect in MnTe…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
The hexagonal MnTe is a prime material candidate for altermagnets, an emerging class of magnetic compounds characterized by the nontrivial interplay of antiparallel spin arrangements with their underlying crystal structures. Recognizing…
Due to nonrelativistic altermagnetic spin splitting effect (ASSE), altermagnets can generate time-reversal-odd spin current and spin splitting torque (SST) with spin polarization parallel to the N\'eel vector. Hence the effective…
Altermagnetism has surfaced as a novel magnetic phase, bridging the properties of ferro- and anti-ferromagnetism. The momentum-dependent spin-splitting observed in these materials reflects their unique symmetry characteristics, which also…
Altermagnets are a recently-discovered class of materials with magnetic ordering that have a zero net magnetization and a momentum-dependent spin splitting in their band structure, arising from a collinear spin arrangement with alternating…
The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have…
We demonstrate that the magnetization in magnetic semiconductors exhibits nutational motion when subjected to an external magnetic field. This behavior originates from the splitting of the conduction-electron band which induces anisotropic,…
Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states.…
Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic…
We study in this paper the parallel spin current in an antiferromagnetic semiconductor thin film where we take into account the interaction between itinerant spins and lattice spins. The spin model is an anisotropic Heisenberg model. We use…
In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin…
Unlike, momentum-dependent Rashba spin-splitting, materials exhibiting intrinsic momentum-independent unidirectional spin polarization also known as persistent spin texture (PST) in the full Brillouin zone are scarce. In this work, a list…
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe…
Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures…
When a charge current is injected into an altermagnet along a suitable crystallographic direction, a transverse spin current can be generated. This so-called spin-splitter effect does not rely on spin-orbit coupling, and is thus distinct…
Altermagnets offer a route to spin-polarized electronic states without macroscopic magnetization, because compensated magnetic order can generate momentum-dependent spin splitting through crystal-symmetry-controlled exchange fields.…
Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting.…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Altermagnets exhibit momentum-dependent spin splitting despite having zero net magnetization. This enables a spin-splitter effect in which an external electric field generates transverse spin currents by separating oppositely polarized…
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered…