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Advancements in 6G wireless technology have elevated the importance of beamforming, especially for attaining ultra-high data rates via millimeter-wave (mmWave) frequency deployment. Although promising, mmWave bands require substantial beam…
We present MobiFuse, a high-precision depth perception system on mobile devices that combines dual RGB and Time-of-Flight (ToF) cameras. To achieve this, we leverage physical principles from various environmental factors to propose the…
Recent advances in three-dimensional laser writing have enabled direct nanostructuring deep within silicon, unlocking a volumetric design space previously inaccessible to surface-bound nanophotonic devices. Here, we introduce subwavelength…
Surface-enhanced Raman spectroscopy is a powerful and versatile sensing method with a detection limit down to the single molecule level. In this article, we demonstrate how topology optimization (TopOpt) can be used for designing surface…
Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual…
Accurate segmentation and measurement of lithography scanning electron microscope (SEM) images are crucial for ensuring precise process control, optimizing device performance, and advancing semiconductor manufacturing yield. Lithography…
Spintronic THz emitters have attracted much attention due to their desirable properties, such as affordability, ultra-wideband capability, high efficiency, and tunable polarization. In this study, we investigate the characteristics of THz…
The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some…
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…
Application of the so called mxing-roughness-information depth (MRI)-model to the quantitative reconstruction of the in-depth distribution of composition is demonstrated by comparing SIMS and AES depth profiles. A GaAs/AlAs reference sample…
The noise in the depth profiles of secondary ion mass spectrometry (SIMS) is studied using different samples under various experimental conditions. Despite the noise contributions from various parts of the dynamic SIMS process, its overall…
Benefiting from the rapid development of metamaterials and metasurfaces, the holographic multiple-input and multiple-output surface (HMIMOS) has been regarded as a promising solution for future wireless networks recently. By densely packing…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
Focused ion beam (FIB)-scanning electron microscopy (SEM) allowed the characterization of the microstructure of two solid oxide fuel cells prepared at different sintering temperatures. 3D volume reconstruction showed that a relatively low…
We present a comprehensive study of the electronic structure of the layered semiconductor InSe using density functional theory. We calculate the band structure of the monolayer and bulk material with the band gap corrected using hybrid…
Analysis of bacterial biofilms is particularly challenging and important with diverse applications from systems biology to biotechnology. Among the variety of techniques that have been applied, time-of-flight secondary ion mass spectrometry…
Candidate systems for topologically-protected qubits include two-dimensional electron gases (2DEGs) based on heterostructures exhibiting a strong spin-orbit interaction (SOI) and superconductivity via the proximity effect. For InAs- or…
We present a theoretical study of Ge-core/Si-shell nanocrystals in a wide bandgap matrix and compare the results with experimental data obtained from the samples prepared by co-sputtering. The empirical tight-binding technique allows us to…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
Historically, many advances in superconducting radio frequency (SRF) cavities destined for use in advanced particle accelerators have come empirically, through the iterative procedure of modifying processing and then performance testing.…