Related papers: Demonstrating sub-electron noise performance in Si…

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…

The first generation of Single electron Sensitive Read Out (SiSeRO) amplifiers, employed as on-chip charge detectors for charge-coupled devices (CCDs) have demonstrated excellent noise and spectral performance: a responsivity of around 800…

The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted…

We demonstrate so-called repetitive non-destructive readout (RNDR) for the first time on a Single electron Sensitive Readout (SiSeRO) device. SiSeRO is a novel on-chip charge detector output stage for charge-coupled device (CCD) image…

Current, state-of-the-art CCDs are close to being able to deliver all key performance figures for future strategic X-ray missions except for the required frame rates. Our Stanford group is seeking to close this technology gap through a…

A radically new CCD development by Marconi Applied Technologies has enabled substantial internal gain within the CCD before the signal reaches the output amplifier. With reasonably high gain, sub-electron readout noise levels are achieved…

We present a spectroscopic system constituted by a Silicon Drift Detector (SDD) coupled to a CMOS charge sensitive preamplifier, named SIRIO, specifically designed to reach ultimate low noise levels. The SDD, with an active area of 13 mm ,…

Depleted p-channel field effect transistor detectors with repetitive-non-destructive readout (RNDR-DEPFETs) achieve a deep sub-electron noise by averaging several independent measurements of one single event. During the repetitive readout…

We have developed a non-destructive readout system that uses a floating-gate amplifier on a thick, fully depleted charge coupled device (CCD) to achieve ultra-low readout noise of 0.068 e- rms/pix. This is the first time that discrete…

Image sensors with nondestructive charge readout provide single-photon or single-electron sensitivity, but at the cost of long readout times. We present a smart readout technique to allow the use of these sensors in visible-light and other…

The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…

The non-destructive readout capability of the Skipper Charge Coupled Device (CCD) has been demonstrated to reduce the noise limitation of conventional silicon devices to levels that allow single-photon or single-electron counting. The noise…

A new approach was developed for the design of front-end circuits for semiconductor radiation detectors. The readout scheme consists of a first stage made of only a few components located close to the detector, and of a remote second stage…

The skipper CCD is a special type of charge coupled device in which the readout noise can be reduced to sub-electron levels by averaging independent measurements of the same charge. Thus the charge in the pixels can be determined by…

Future strategic X-ray astronomy missions will require unprecedentedly sensitive wide-field imagers providing high frame rates, low readout noise and excellent soft energy response. To meet these needs, our team is employing a multi-pronged…

Ultra-sensitive detectors and readout devices based on the radio frequency single electron transistor (rf-SET) combine near quantum-limited sensitivity with fast operation. Here we describe a twin rf-SET detector that uses two…

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal,…

We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0…

Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…