Related papers: Demonstrating sub-electron noise performance in Si…

The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in…

An Application Specific Integrated Circuit (ASIC), called RIGEL, designed for the sparse readout of a Silicon Pixel Drift Detector (PixDD) for space applications is presented.The low leakage current (less than 1 pA at +20 {\deg}C) and anode…

We present an X-ray characterization of a fully depleted, 725 $\mu$m thick p-channel SiSeRO CCD. Measurements with a $^{55}$Fe source yield an energy resolution of $54 \pm 0.9$ eV ($14.6 \pm 0.25 e^{-}$) at 5.9 keV for single-pixel events,…

Multiple-Amplifier Sensing (MAS) charge-coupled devices (CCDs) have recently been shown to be promising silicon detectors that meet noise sensitivity requirements for next generation Stage-5 spectroscopic surveys and potentially, future…

We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout…

The broad energy response, low electronic read noise, and good energy resolution have made X-ray Charge-Coupled Devices (CCDs) an obvious choice for developing soft X-ray astronomical instruments over the last half century. They also come…

Transition-edge sensor (TES) is a highly sensitive device that is capable of detecting extremely low levels of energy. It is characterised by low noise performance and high energy resolution. A mature method for reading out TES signal is…

The readout noise for Charge-Coupled Devices (CCDs) has been the main limitation when using these detectors for measuring small amplitude signals. A readout system for a new scientific, low noise CCD is presented in this paper. The Skipper…

A novel readout architecture that uses multiple non-destructive floating-gate amplifiers to achieve sub-electron readout noise in a thick, fully-depleted silicon detector is presented. This Multi-Amplifier Sensing Charge-Coupled Device…

Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to…

We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer…

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity $1.4 \times 10^{-4}e/\sqrt{Hz}$, limited by preamplifier,…

We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution…

Skipper Charge-Coupled Devices (Skipper-CCDs) are a leading technology in the search for sub-GeV dark matter and coherent elastic neutrino-nucleus scattering. A key background for rare-event searches with these detectors arises from…

A wide swing charge sensitive amplifier (CSA) has been developed, as a part of a front-end electronics (FEE) readout ASIC, for a prototype silicon tungsten (Si-W) based electromagnetic (EM) calorimeter. The CSA, designed in 0.35 $\mu$m…

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…

Recent advances in the development of cryogenic particle detectors such as magnetic microcalorimeters (MMCs) allow the fabrication of sensor arrays with an increasing number of pixels. Since these detectors must be operated at the lowest…

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of…

Single electron transistors (SETs) fabricated from single-walled carbon nanotubes (SWNTs) can be operated as highly sensitive charge detectors reaching sensitivity levels comparable to metallic radio frequency SETs (rf-SETs). Here we…