Related papers: One-dimensional quantum dot array integrated with …
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique.…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…
We show that a scalable photonic crystal nanocavity array, in which single embedded quantum dots are coherently interacting, can perform as an universal single-operation quantum gate. In a passive system, the optical analogue of…
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate…
The ability to manipulate coherently individual quantum objects organized in arrays is a prerequisite to any scalable quantum information platform. For electron spin qubits, it requires the fine tuning of large arrays of tunnel-coupled…
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…
While quantum dots are at the forefront of quantum device technology, tuning multi-dot systems requires a lengthy experimental process as multiple parameters need to be accurately controlled. This process becomes increasingly time-consuming…
A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious…
We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by…
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…
Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits,…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots…
We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long…