Related papers: Unconventional Spin-Orbit Torques from Sputtered M…
Spin-orbit-torque (SOT) induced magnetization switching in Co/Pt/Co trilayer, with two Co layers exhibiting magnetization easy axes orthogonal to each other is investigated. Pt layer is used as a source of spin-polarized current as it is…
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetisation switching in advanced spintronic devices. Over the past two decades, researchers have primarily focused on enhancing spin…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous…
We theoretically investigate the supercurrent-induced magnetization dynamics of a two-dimensional lattice of ferromagnetically ordered spins placed on a conventional superconductor with broken spatial inversion symmetry and strong…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered ${\delta}-$TaN/Co20Fe60B20 devices through spin-torque…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and…
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and…
Polarons and spin-orbit (SO) coupling are distinct quantum effects that play a critical role in charge transport and spin-orbitronics. Polarons originate from strong electron-phonon interaction and are ubiquitous in polarizable materials…
Structural, interfacial, optical, and transport properties of large-area MoS2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated…
Efficient manipulation of magnetic materials is essential for spintronics. In spin-current generator/magnet bilayers, the efficiency of spin-orbit torques per magnetic layer thickness scales inversely with the magnetic layer thickness,…
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that…
Discovery of intrinsic two-dimensional (2D) magnetic materials is crucial for understanding the fundamentals of 2D magnetism and realizing next-generation magnetoelectronic and magneto-optical devices. Although significant efforts have been…
The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and…
This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based…
Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the…