Related papers: Switchable Ferroelectricity in Subnano Silicon Thi…
Electrical transport in oxide thin films under high pressure remains largely unexplored due to the lack of a universal experimental strategy. Here we develop an approach that enables high-pressure transport measurements in freestanding…
Sliding ferroelectricity in bilayer hexagonal boron nitride (h-BN) offers compelling prospects for next-generation non-volatile memory, yet the atomistic dynamics of electric-field-driven polarization switching remain poorly understood.…
Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon CMOS technology, high switchable polarization, good endurance and thickness scalability.…
Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and…
Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray…
Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be…
HfO2, a simple binary oxide, holds ultra-scalable ferroelectricity integrable into silicon technology. Polar orthorhombic (Pbc21) form in ultra-thin-films ascribes as the plausible root-cause of the astonishing ferroelectricity, which has…
For Sn$_2$P$_2$S$_6$ ferroelectrics the second order phase transitions line is observed until reaching the tricritical point at transition temperature lowering to 250 K by compression. Observed temperature-pressure phase diagram agrees with…
Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, as well as ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to…
Covalent-polar semiconductors that show intrinsic two-dimensional (2D) vertical polarization present new device opportunities. These materials differ from ordinary ferroelectrics in that they are able to maintain polarization normal to a…
Structural, electronic, ferroelectric, and optical properties of two-dimensional (2D) BiN monolayer material with phosphorene-like structure are studied in terms of the density functional theory and modern Berry phase ferroelectric method.…
HfO2-based ferroelectric films have attracted considerable attention as their nanoscale ferroelectricity and compatibility with cmos technology, fulfilling demands of emerging memory technologies. However, as films scale down,…
Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory devices.Here, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic…
Very recently there was a report of the discovery using piezoelectric force microscopy (PFM) of a switchable ferroelectric polarization in 1.6 % tensile strained TiO2 thin film with anatase crystal structure (see N. Deepak et al. Adv.…
Single-crystalline silicon is well known to be a poor thermoelectric material due to its high thermal conductivity. Most excellent research has focused on ways to decrease its thermal conductivity while retaining acceptably large power…
Full pattern Le-Bail refinement using x-ray powder diffraction profiles of Sr1-xCaxTiO3 for x=0.02, 0.04 in the temperature range 12 to 300 K reveals anomalies in the unit cell parameters at 170, 225 K due to an antiferrodistortive (cubic…
The structural, thermal, and dielectric properties of the ferroelectric phase of HfO$_2$, ZrO$_2$ and Hf$_{0.5}$ Zr$_{0.5}$ O$_2$ (HZO) are investigated with carefully validated density functional computations. We find, that the free bulk…
We have studied the electrical field induced conductance transition in thin film of Perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to conducting state with a high ON-OFF ratio in those…
The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few…