Related papers: RowPress Vulnerability in Modern DRAM Chips
This paper addresses the challenge of anti-jamming in moving reactive jamming scenarios. The moving reactive jammer initiates high-power tracking jamming upon detecting any transmission activity, and when unable to detect a signal, resorts…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…
We study a new vulnerability in commercial-scale safety-aligned large language models (LLMs): their refusal to generate harmful responses can be broken by flipping only a few bits in model parameters. Our attack jailbreaks billion-parameter…
Reliability has emerged as a key topic of interest for researchers around the world to detect and/or mitigate the side effects of decreasing transistor sizes, such as soft errors. Traditional solutions, like DMR and TMR, incur significant…
Even though recent years have seen many attacks exposing severe vulnerabilities in Federated Learning (FL), a holistic understanding of what enables these attacks and how they can be mitigated effectively is still lacking. In this work, we…
Rust is a popular memory-safe systems programming language. In order to interact with hardware or call into non-Rust libraries, Rust provides \emph{unsafe} language features that shift responsibility for ensuring memory safety to the…
Modern microarchitectures incorporate optimization techniques such as speculative loads and store forwarding to improve the memory bottleneck. The processor executes the load speculatively before the stores, and forwards the data of a…
Due to the globalization in the semiconductor supply chain, counterfeit dynamic random-access memory (DRAM) chips/modules have been spreading worldwide at an alarming rate. Deploying counterfeit DRAM modules into an electronic system can…
Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the…
Data replication technologies enable efficient and highly-available data access, thus gaining more and more interests in both the academia and the industry. However, data replication introduces the problem of data consistency. Modern…
The initial location of data in DRAMs is determined and controlled by the 'address-mapping' and even modern memory controllers use a fixed and run-time-agnostic address mapping. On the other hand, the memory access pattern seen at the…
Crossbar arrays using emerging non-volatile memory technologies such as Resistive RAM (ReRAM) offer high density, fast access speed and low-power. However the bandwidth of the crossbar is limited to single-bit read/write per access to avoid…
At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…
Programming errors, defective hardware components (such as hard disk spindle defects), and environmental hazards can lead to invalid memory operations. In addition, less predictable forms of environmental stress, such as radiation, thermal…
In an increasingly interconnected world, protecting electronic devices has grown more crucial because of the dangers of data extraction, reverse engineering, and hardware tampering. Producing chips in a third-party manufacturing company can…
Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…
We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory…
Oblivious RAM (ORAM) is a provable secure primitive to prevent access pattern leakage on the memory bus. It serves as the intermediate layer between the trusted on-chip components and the untrusted external memory systems to modulate the…
Transistor-based memories are rapidly approaching their maximum density per unit area. Resistive crossbar arrays enable denser memory due to the small size of switching devices. However, due to the resistive nature of these memories, they…