Related papers: Shadow Mask Molecular Beam Epitaxy for In-Plane Gr…
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking…
A simple metamaterial-based wide-angle plasmonic absorber is introduced, fabricated, and experimentally characterized using angle-resolved infrared spectroscopy. The metamaterials are prepared by nano-imprint lithography, an attractive…
Optical spectroscopy is a fundamental tool in numerous areas of science and technology. Much effort has focused on miniaturizing spectrometers, but thus far at the cost of high spectral resolution and broad operating range. Here, we…
We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular…
This paper indicates that the sensitivity and accuracy of an infrared radiometer for emissivity measurements depends not only on its design and the measurement method, but also on the spurious radiation. This spurious radiation must be…
PbSe is a narrow bandgap IV-VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline earth or rare earth elements such as Sr and Eu can substitute Pb to widen the…
The dielectric layers surrounding a metasurface have a large impact on its frequency and angular response. The notion of effective permittivity captures this dependence by suggesting that a layered dielectric environment will perturb…
We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on…
We present an X-band waveguide (WR90) and UHF waveguide (WR1500) measurement method that permits the extraction of the complex permittivity for low dielectric loss tangent material specimen. The extraction method relies on computational…
The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more…
We reveal the unique and fundamental advantage of inerter-based elastic metamaterials by a comparative study among different configurations. When the embedded inerter is connected to the matrix material on both ends, the metamaterial shows…
Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature…
We demonstrate that surface plasmons of a thin metal film interacting with a periodic array of nano-structures around it can be utilized to make bulk negative index metamaterials at visible spectrum with simultaneously negative permittivity…
Transformation optics methods and gradient index electromagnetic structures rely upon spatially varied arbitrary permittivity. This, along with recent interest in millimeter-wave lens-based antennas demands high spatial resolution…
The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and…
Metasurfaces enable exceptional control over the light with surface-confined planar components, offering the fascinating possibility of very dense integration and miniaturization in photonics. Here, we design, fabricate and experimentally…
Estimating redshifts from broadband photometry is often limited by how accurately we can map the colors of galaxies to an underlying spectral template. Current techniques utilize spectrophotometric samples of galaxies or spectra derived…
We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450{\deg}C). We find that the presence of droplets on the growth surface…
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the…
We report the successful growth of tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO3(001) substrate by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in…