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We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
Understanding and manipulating nanoscale domain wall (DW) dynamics is a central topic in magnetism and spintronics for its promising applications in logic and memory devices. In most magnetic systems, inertia affects only transient DW…
Brain-inspired neuromorphic computing is a promising path towards next generation analogue computers that are fundamentally different compared to the conventional von Neumann architecture. One model for neuromorphic computing that can mimic…
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the…
Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for new methods of information storage and processing. A major obstacle for their practical use is the domainwall velocity, which is traditionally…
We report on the controllable pinning of domain walls in stripes with perpendicular magnetic anisotropy by magnetostatic coupling to magnetic vortices in disks located above the stripe. Pinning mechanisms and depinning fields are reported.…
Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A…
Magnetic domain walls in antiferromagnets have been proposed as key components for faster conventional information processing, thanks to their enhanced stability and ultrafast propagation. However, how non-conventional computing methods…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Antiferromagnetic spintronics is an emerging research field which aims to utilize antiferromagnets as core elements in spintronic devices. A central motivation toward this direction is that antiferromagnetic spin dynamics is expected to be…
Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and…
The opening or closing mechanism of a voltage-gated ion channel is triggered by the potential difference crossing the cell membrane in the nervous system. Based on this picture, we model the ion channel as a nanoscale two-terminal ionic…
Coherent control of domain wall dynamics offers a route to fast manipulation of magnetic textures beyond thermally activated motion. We demonstrate resonant excitation of linear and nonlinear dynamics of a pinned domain wall in a…
The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the…
The dynamics of current-induced motion of a magnetic domain wall in a quasi-one-dimensional ferromagnet with both easy-axis and easy-plane anisotropy, is studied. We pay a special attention to the case of a sharp domain wall, and calculate…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…
Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain…
A moving magnetic domain wall produces an electromotive force (emf). It is therefore possible to read the state of a magnetic memory device via the emf it produces when subject to an interrogation pulse. It is also possible to amplify…
A design of a magnonic phase shifter operating without an external bias magnetic field is proposed. The phase shifter uses a localized collective spin wave mode propagating along a domain wall "waveguide" in a dipolarly-coupled magnetic dot…