Related papers: Error-Free and Current-Driven Synthetic Antiferrom…
The manipulation of magnetism with a gate voltage is expected to lead the way towards the realization of energy-efficient spintronics devices and high-performance magnetic memories. Exploiting magneto-ionic effects under micro-patterned…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Within linear continuum theory, no magnetic texture can propagate faster than the maximum group velocity of its spin waves. Here we report a transient regime due to the appearance of additional antiferromagnetic textures that breaks the…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
Spintronics exhibits significant potential in neuromorphic computing system with high speed, high integration density, and low dissipation. In this letter, we propose an ultralow-dissipation spintronic memristor composed of a synthetic…
Precise control of magnetic domain formation at the nanoscale remains constrained by stochastic defect-mediated and unstable pinning, limiting scalability and reproducibility in spintronic architectures. Here we demonstrate that spatially…
Domain-wall magnetoresistance and low-frequency noise have been studied in epitaxial antiferromagnetically-coupled [Fe/Cr(001)]_10 multilayers and ferromagnetic Co line structures as a function of DC current intensity. In [Fe/Cr(001)]_10…
The current mediated domain-wall dynamics in a thin ferromagnetic wire is investigated. We derive the effective equations of motion of the domain wall. They are used to study the possibility to optimize the power supplied by electric…
There has been a plethora of studies on domain wall dynamics in magnetic nanostrips, mainly because of its versatile non-linear physics and potential applications in data storage devices. However, most of the studies focus on out-of-plane…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
We consider an antiferromagnet in one space dimension with easy-axis anisotropy in a perpendicular magnetic field. We study propagating domain wall solutions that can have a velocity up to a maximum $v_c$. The width of the domain wall is a…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic…
In this work, we simulate the functionality of artificial neuron and synapse using spin-orbit torque-based spintronic devices and implemented a fully connected artificial neural netwrok (ANN). These neuro-synaptic devices are emulated using…
In this work, we study the rotating magnetic field driven domain wall (DW) motion in antiferromagnetic nanowires, using the micromagnetic simulations of the classical Heisenberg spin model. We show that in low frequency region, the rotating…
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…
The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…
We study current-driven domain-wall (DW) dynamics in antiferromagnets (AFMs) with Dzyaloshinskii-Moriya interaction (DMI). We obtain an exact analytical solution for spiral DW dynamics, applicable to both head-to-head DWs under bulk DMI and…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…