Related papers: Error-Free and Current-Driven Synthetic Antiferrom…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs…
We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and…
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
By means of local ion implantation, we investigated the influence of lateral interface on current-induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
Ultrathin ferromagnetic strips with high perpendicular anisotropy have been proposed for the development of memory devices where the information is coded in tiny domains separated by domain walls. The design of practical devices requires…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…
We theoretically discover possible emergence of reentrant Walker breakdowns for current-driven domain walls in layered antiferromagnets in striking contrast to the unique Walker breakdown in ferromagnets. We reveal that the Lorentz…
Domain walls in antiferromagnets under a spin-polarized current present dynamical behavior that is not observed in ferromagnets, and it is tunable by the current polarization. Precessional dynamics is obtained for perpendicular spin…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently…
As a collective quasiparticle excitation of the magnetic order in magnetic materials, spin wave, or magnon when quantized, can propagate in both conducting and insulating materials. Like the manipulation of its optical counterpart, the…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Spintronic devices, whose operation is based on the motion of a magnetic domain wall (DW), have been proposed recently. If a DW could be driven directly by flowing an electric current instead of a magnetic field, the performance and…
Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…