Related papers: Electric Hall Effect and Quantum Electric Hall Eff…
The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…
A new model of momentum and electric field transfer between two adjacent 2D electron systems in the Quantum Hall Effect is proposed. The drag effect is due to momentum transfer from the vortex system of one layer to the vortex system of…
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a $ p$-type HgTe/Cd$_x$Hg$_{1-x}$Te double quantum well (DQW) consisting of two HgTe layers of critical width. The observed QHE is a reentrant…
A useful experimental signature of the ordinary spin Hall effect is the spin accumulation it produces at the sample edges. The superspin Hall current [Phys. Rev. B 96, 094512 (2017)] is a transverse equilibrium spin current which is induced…
Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…
We report on the transition from magnetic edge to electric edge transport in a split magnetic gate device which applies a notch magnetic field to a two-dimensional electron gas. The gate bias allows tuning the overlap of magnetic and…
Electron correlation and topology are two central threads of modern condensed matter physics. Semiconductor moir\'e materials provide a highly tunable platform for studies of electron correlation. Correlation-driven phenomena, including the…
Under broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field,…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
Quantum anomalous Hall (QAH) effect in magnetic topological insulator (TI) is a novel transport phenomenon in which the Hall resistance reaches the quantum plateau in the absence of external magnetic field. Recently, this exotic effect has…
The valley-polarized quantum anomalous Hall effect (VQAHE) attracts intensive interest since it uniquely combines valleytronics and spintronics with nontrivial band topology. Here, based on first-principles calculations and…
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…
We theoretically studied the quasiparticle transport in a 2D electron gas biased in the quantum Hall regime and in the presence of a lateral potential barrier. The lateral junction hosts the specific magnetic field dependent quasiparticle…
The quantum anomalous Hall effect is defined as a quantized Hall effect realized in a system without external magnetic field. Quantum anomalous Hall effect is a novel manifestation of topological structure in many-electron systems, and may…
The thermodynamic potential of an ideal nonrelativistic gas of two-dimensional electrons in crossed uniform magnetic and electric fields is constructed. For low temperatures and very weak electric fields, it is shown that the Hall…
The spontaneous Hall effect, corresponding to a zero-field anomalous Hall effect (AHE), is induced by symmetry breaking associated with ferromagnetism. Studies in recent years, however, have revealed that antiferromagnetic (AFM) states…
Photovoltaic Hall effect, i.e., generation of a photocurrent perpendicular to the bias electric field, is an interesting platform of Berry curvature engineering by external fields. Floquet engineering aims at generation of light-induced…
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
We develop a simple kinetic equation description of edge state dynamics in the fractional quantum Hall effect (FQHE), which allows us to examine in detail equilibration processes between multiple edge modes. As in the integer quantum Hall…