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Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed…

Mesoscale and Nanoscale Physics · Physics 2015-02-23 Jeil Jung , Ashley DaSilva , Allan H. MacDonald , Shaffique Adam

The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…

Mesoscale and Nanoscale Physics · Physics 2014-09-05 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

Materials Science · Physics 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek

Graphite and hexagonal boron nitride (h-BN) are two prominent members of the family of layered materials possessing a hexagonal lattice. While graphite has non-polar homo-nuclear C-C intra-layer bonds, h-BN presents highly polar B-N bonds…

Materials Science · Physics 2012-04-16 Oded Hod

We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a…

Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigatethe structural and electronic…

Materials Science · Physics 2015-06-25 Yongqing Cai , Gang Zhang , Yong-Wei Zhang

In this Letter, we derive an effective theory of graphene on a hexagonal Boron Nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is…

Mesoscale and Nanoscale Physics · Physics 2012-11-12 M. Kindermann , Bruno Uchoa , D. L. Miller

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body…

Graphene and boron nitride (GPBN) heterostructures provide a viable way to realize tunable bandgap, promising new opportunities in graphene-based nanoelectronic and optoelectronic devices. In the present study, we investigated the interplay…

Materials Science · Physics 2015-03-10 Bin Ouyang , Fanchao Meng , Jun Song

We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create…

Mesoscale and Nanoscale Physics · Physics 2016-06-29 Hatef Sadeghi , Sara Sangtarash , Colin Lambert

We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal…

In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications.…

Mesoscale and Nanoscale Physics · Physics 2024-07-17 Priyanka Sinha , Prasanta K. Panigrahi , Bheemalingam Chittari

Among two-dimensional atomic crystals, hexagonal boron nitride (hBN) is one of the most remarkable materials to fabricate heterostructures revealing unusual properties. We perform first-principles calculations to determine whether…

Mesoscale and Nanoscale Physics · Physics 2014-04-09 Sohee Park , Changwon Park , Gunn Kim

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction…

Mesoscale and Nanoscale Physics · Physics 2014-05-21 Menno Bokdam , Taher Amlaki , Geert Brocks , Paul J. Kelly

Bandgap engineering by substituting C with B and N atoms in graphene has been shown to be a promising way to improve semiconducting properties of graphene. Such hybridized monolayers consisting of hexagonal BN phases in graphene (h-BNC)…

Materials Science · Physics 2015-05-28 Qing Peng , Amir Zamiri , Suvranu De

Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides…

Mesoscale and Nanoscale Physics · Physics 2011-10-27 Neerav Kharche , Saroj K. Nayak

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

Mesoscale and Nanoscale Physics · Physics 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

We investigate interlayer adhesion and relaxation at interfaces between graphene and hexagonal boron nitride (hBN) monolayers in van der Waals heterostructures. The adhesion potential between graphene and hBN is calculated as a function of…

Since the rising of graphene, boron nitride monolayers have been deeply studied due to their structural similarity with the former. A hexagonal graphene-like boron-carbon-nitrogen (h-BCN) monolayer was synthesized recently using bis-BN…

Effects of antidot lattices on electronic structures of graphene and hexagonal BN (h-BN) are investigated using the first principles method based on density functional theory. For graphene, we find that when the antidot lattice is along the…

Materials Science · Physics 2013-11-27 Aihua Zhang , Hao Fatt Teoh , Zhenxiang Dai , Yuan Ping Feng , Chun Zhang
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